Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100)
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/140586 |
Resumo: | Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth profiles show similar Al profiles for thicker ~;18 nm! films. The Al profile obtained on the thin film is consistent with a thin aluminum silicate layer, consisting of Al–O–Si bond units, between the silicon and Al2O3 layer. Transmission electron microscopy shows evidence for a two-layer structure in Si/Al2O3 /Al stacks, and x-ray photoelectron spectroscopy shows a peak in the Si 2p region near 102 eV, consistent with Al–O–Si units. The silicate layer is speculated to result from reactions between silicon and hydroxyl groups formed on the surface during oxidation of the adsorbed precursor. |
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Klein, T.M.Niu, D.Epling, W.S.Li, W.Maher, D.M.Hobbs, C.C.Hegde, R.I.Baumvol, Israel Jacob RabinParsons, G.N.2016-05-10T02:06:59Z19990003-6951http://hdl.handle.net/10183/140586000142692Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth profiles show similar Al profiles for thicker ~;18 nm! films. The Al profile obtained on the thin film is consistent with a thin aluminum silicate layer, consisting of Al–O–Si bond units, between the silicon and Al2O3 layer. Transmission electron microscopy shows evidence for a two-layer structure in Si/Al2O3 /Al stacks, and x-ray photoelectron spectroscopy shows a peak in the Si 2p region near 102 eV, consistent with Al–O–Si units. The silicate layer is speculated to result from reactions between silicon and hydroxyl groups formed on the surface during oxidation of the adsorbed precursor.application/pdfengApplied physics letters. New York. Vol. 75, no. 25 (Dec. 1999), p. 4001-4003Reacoes nuclearesAlumínioFilmes finosDeposição de vapor químicoSilícioTemperaturaMicroscopia eletrônica de transmissãoEspectros de raios x por fotoeletronsOxidaçãoEvidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000142692.pdf000142692.pdfTexto completo (inglês)application/pdf496946http://www.lume.ufrgs.br/bitstream/10183/140586/1/000142692.pdfd7fa79f80ba8a6afdee9b63dcd8e31f1MD51TEXT000142692.pdf.txt000142692.pdf.txtExtracted Texttext/plain14884http://www.lume.ufrgs.br/bitstream/10183/140586/2/000142692.pdf.txtd0184fcc7c8017a87a7e319bd349fe46MD52THUMBNAIL000142692.pdf.jpg000142692.pdf.jpgGenerated Thumbnailimage/jpeg2342http://www.lume.ufrgs.br/bitstream/10183/140586/3/000142692.pdf.jpg5c0de82e81465714e8b3afdf93393625MD5310183/1405862022-02-22 05:05:17.575635oai:www.lume.ufrgs.br:10183/140586Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:05:17Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
title |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
spellingShingle |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) Klein, T.M. Reacoes nucleares Alumínio Filmes finos Deposição de vapor químico Silício Temperatura Microscopia eletrônica de transmissão Espectros de raios x por fotoeletrons Oxidação |
title_short |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
title_full |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
title_fullStr |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
title_full_unstemmed |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
title_sort |
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al/sub 2/O/sub 3/ thin films Si(100) |
author |
Klein, T.M. |
author_facet |
Klein, T.M. Niu, D. Epling, W.S. Li, W. Maher, D.M. Hobbs, C.C. Hegde, R.I. Baumvol, Israel Jacob Rabin Parsons, G.N. |
author_role |
author |
author2 |
Niu, D. Epling, W.S. Li, W. Maher, D.M. Hobbs, C.C. Hegde, R.I. Baumvol, Israel Jacob Rabin Parsons, G.N. |
author2_role |
author author author author author author author author |
dc.contributor.author.fl_str_mv |
Klein, T.M. Niu, D. Epling, W.S. Li, W. Maher, D.M. Hobbs, C.C. Hegde, R.I. Baumvol, Israel Jacob Rabin Parsons, G.N. |
dc.subject.por.fl_str_mv |
Reacoes nucleares Alumínio Filmes finos Deposição de vapor químico Silício Temperatura Microscopia eletrônica de transmissão Espectros de raios x por fotoeletrons Oxidação |
topic |
Reacoes nucleares Alumínio Filmes finos Deposição de vapor químico Silício Temperatura Microscopia eletrônica de transmissão Espectros de raios x por fotoeletrons Oxidação |
description |
Using narrow nuclear reaction resonance profiling, aluminum profiles are obtained in ;3.5 nm Al2O3 films deposited by low temperature ~,400 °C! chemical vapor deposition on Si~100!. Narrow nuclear resonance and Auger depth profiles show similar Al profiles for thicker ~;18 nm! films. The Al profile obtained on the thin film is consistent with a thin aluminum silicate layer, consisting of Al–O–Si bond units, between the silicon and Al2O3 layer. Transmission electron microscopy shows evidence for a two-layer structure in Si/Al2O3 /Al stacks, and x-ray photoelectron spectroscopy shows a peak in the Si 2p region near 102 eV, consistent with Al–O–Si units. The silicate layer is speculated to result from reactions between silicon and hydroxyl groups formed on the surface during oxidation of the adsorbed precursor. |
publishDate |
1999 |
dc.date.issued.fl_str_mv |
1999 |
dc.date.accessioned.fl_str_mv |
2016-05-10T02:06:59Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/140586 |
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0003-6951 |
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000142692 |
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0003-6951 000142692 |
url |
http://hdl.handle.net/10183/140586 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. New York. Vol. 75, no. 25 (Dec. 1999), p. 4001-4003 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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