Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001)
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141205 |
Resumo: | The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford backscattering, narrow nuclear resonance profiling, and low-energy ion scattering provided the average composition of the film and the depth distributions of different elements. Chemical analysis of these elements was accessed by x-ray photoelectron spectroscopy. Annealing in vacuum produced thickness inhomogeneities and/or transport of very small amounts of Si from the substrate into the overlying film, with formation of Si precipitates. Annealing in O2 led to oxygen exchange throughout the film, as well as Si transport in slightly higher amounts than in vacuum. Differently from the observed upon annealing in vacuum, Si was either incorporated into the Zr,Al–O framework or oxidized in SiO2. |
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Morais, JonderRosa, Elisa Brod Oliveira daPezzi, Rafael PerettiMiotti, LeonardoBaumvol, Israel Jacob Rabin2016-05-17T02:07:21Z20010003-6951http://hdl.handle.net/10183/141205000306494The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford backscattering, narrow nuclear resonance profiling, and low-energy ion scattering provided the average composition of the film and the depth distributions of different elements. Chemical analysis of these elements was accessed by x-ray photoelectron spectroscopy. Annealing in vacuum produced thickness inhomogeneities and/or transport of very small amounts of Si from the substrate into the overlying film, with formation of Si precipitates. Annealing in O2 led to oxygen exchange throughout the film, as well as Si transport in slightly higher amounts than in vacuum. Differently from the observed upon annealing in vacuum, Si was either incorporated into the Zr,Al–O framework or oxidized in SiO2.application/pdfengApplied physics letters. Melville. Vol. 79, no. 13 (Sept. 2001), p. 1998-2000Compostos de alumínioRecozimentoInterdifusao quimicaFilmes finos dieletricosImpacto ion-superfícieEstrutura não-cristalinaAnálise química nuclearPrecipitaçãoRetroespalhamento rutherfordRevestimento por pulverizaçãoDifração de raios XEspectro de fotoeletrons produzidos por raios-xCompostos de zirconioComposition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001)Estrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000306494.pdf000306494.pdfTexto completo (inglês)application/pdf411287http://www.lume.ufrgs.br/bitstream/10183/141205/1/000306494.pdfcdd73a1855eef5b65428bf43fcc136cdMD51TEXT000306494.pdf.txt000306494.pdf.txtExtracted Texttext/plain16293http://www.lume.ufrgs.br/bitstream/10183/141205/2/000306494.pdf.txtab54e18616b3e2cd3eb2a501412565fbMD52THUMBNAIL000306494.pdf.jpg000306494.pdf.jpgGenerated Thumbnailimage/jpeg2214http://www.lume.ufrgs.br/bitstream/10183/141205/3/000306494.pdf.jpgce17c7ace95634bf2db0419804cad638MD5310183/1412052023-07-20 03:36:44.881318oai:www.lume.ufrgs.br:10183/141205Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-20T06:36:44Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
title |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
spellingShingle |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) Morais, Jonder Compostos de alumínio Recozimento Interdifusao quimica Filmes finos dieletricos Impacto ion-superfície Estrutura não-cristalina Análise química nuclear Precipitação Retroespalhamento rutherford Revestimento por pulverização Difração de raios X Espectro de fotoeletrons produzidos por raios-x Compostos de zirconio |
title_short |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
title_full |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
title_fullStr |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
title_full_unstemmed |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
title_sort |
Composition, atomic transport, and chemical stability of ZrAl/sub x/O/sub y/ ultrathin films deposited on Si(001) |
author |
Morais, Jonder |
author_facet |
Morais, Jonder Rosa, Elisa Brod Oliveira da Pezzi, Rafael Peretti Miotti, Leonardo Baumvol, Israel Jacob Rabin |
author_role |
author |
author2 |
Rosa, Elisa Brod Oliveira da Pezzi, Rafael Peretti Miotti, Leonardo Baumvol, Israel Jacob Rabin |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Morais, Jonder Rosa, Elisa Brod Oliveira da Pezzi, Rafael Peretti Miotti, Leonardo Baumvol, Israel Jacob Rabin |
dc.subject.por.fl_str_mv |
Compostos de alumínio Recozimento Interdifusao quimica Filmes finos dieletricos Impacto ion-superfície Estrutura não-cristalina Análise química nuclear Precipitação Retroespalhamento rutherford Revestimento por pulverização Difração de raios X Espectro de fotoeletrons produzidos por raios-x Compostos de zirconio |
topic |
Compostos de alumínio Recozimento Interdifusao quimica Filmes finos dieletricos Impacto ion-superfície Estrutura não-cristalina Análise química nuclear Precipitação Retroespalhamento rutherford Revestimento por pulverização Difração de raios X Espectro de fotoeletrons produzidos por raios-x Compostos de zirconio |
description |
The stability of a ZrAlxOy film sputtered on Si upon thermal annealing in vacuum or in O2 was investigated. X-ray diffraction indicated that the as-deposited film was amorphous and remained so after annealing. Rutherford backscattering, narrow nuclear resonance profiling, and low-energy ion scattering provided the average composition of the film and the depth distributions of different elements. Chemical analysis of these elements was accessed by x-ray photoelectron spectroscopy. Annealing in vacuum produced thickness inhomogeneities and/or transport of very small amounts of Si from the substrate into the overlying film, with formation of Si precipitates. Annealing in O2 led to oxygen exchange throughout the film, as well as Si transport in slightly higher amounts than in vacuum. Differently from the observed upon annealing in vacuum, Si was either incorporated into the Zr,Al–O framework or oxidized in SiO2. |
publishDate |
2001 |
dc.date.issued.fl_str_mv |
2001 |
dc.date.accessioned.fl_str_mv |
2016-05-17T02:07:21Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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info:eu-repo/semantics/publishedVersion |
format |
article |
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publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141205 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000306494 |
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0003-6951 000306494 |
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http://hdl.handle.net/10183/141205 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 79, no. 13 (Sept. 2001), p. 1998-2000 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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