Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141737 |
Resumo: | Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to 1000 °C in different atmospheres, leading to crystallization and densification of Al2O3, with an increase in the band gap. Exposure to O2 at high temperatures produced SiO2 and AlSixOy at the Al2O3 /SiC interface, with less silicate on the Si-terminated face. Annealing in N2 before exposure to O2 hindered oxygen diffusion and exchange, leading to more stable thin film structures from the point of view of atomic transport. |
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Corrêa, Silma AlbertonMarmitt, Gabriel GuterresBom, Nicolau MolinaRosa, Aline Tais daStedile, Fernanda ChiarelloRadtke, ClaudioSoares, Gabriel VieiraBaumvol, Israel Jacob RabinKrug, CristianoGobbi, Angelo Luiz2016-05-24T02:10:59Z20090003-6951http://hdl.handle.net/10183/141737000714316Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to 1000 °C in different atmospheres, leading to crystallization and densification of Al2O3, with an increase in the band gap. Exposure to O2 at high temperatures produced SiO2 and AlSixOy at the Al2O3 /SiC interface, with less silicate on the Si-terminated face. Annealing in N2 before exposure to O2 hindered oxygen diffusion and exchange, leading to more stable thin film structures from the point of view of atomic transport.application/pdfengApplied physics letters. New York. Vol. 95, no. 5 (Aug. 2009), 051916, 3 p.Carbeto de silícioFilmes finos dieletricosÓxido de alumínioMateriais nanoestruturadosEnhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiCEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000714316.pdf000714316.pdfTexto completo (inglês)application/pdf706748http://www.lume.ufrgs.br/bitstream/10183/141737/1/000714316.pdffd0262aab982c53ad310bf5e83f81168MD51TEXT000714316.pdf.txt000714316.pdf.txtExtracted Texttext/plain17713http://www.lume.ufrgs.br/bitstream/10183/141737/2/000714316.pdf.txt96ec35f83ecba5e1237628219f3c151eMD52THUMBNAIL000714316.pdf.jpg000714316.pdf.jpgGenerated Thumbnailimage/jpeg2142http://www.lume.ufrgs.br/bitstream/10183/141737/3/000714316.pdf.jpg8a4047ac27c36bb6d538b4960f04d4c9MD5310183/1417372023-06-15 03:28:54.431127oai:www.lume.ufrgs.br:10183/141737Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-06-15T06:28:54Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
title |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
spellingShingle |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC Corrêa, Silma Alberton Carbeto de silício Filmes finos dieletricos Óxido de alumínio Materiais nanoestruturados |
title_short |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
title_full |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
title_fullStr |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
title_full_unstemmed |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
title_sort |
Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC |
author |
Corrêa, Silma Alberton |
author_facet |
Corrêa, Silma Alberton Marmitt, Gabriel Guterres Bom, Nicolau Molina Rosa, Aline Tais da Stedile, Fernanda Chiarello Radtke, Claudio Soares, Gabriel Vieira Baumvol, Israel Jacob Rabin Krug, Cristiano Gobbi, Angelo Luiz |
author_role |
author |
author2 |
Marmitt, Gabriel Guterres Bom, Nicolau Molina Rosa, Aline Tais da Stedile, Fernanda Chiarello Radtke, Claudio Soares, Gabriel Vieira Baumvol, Israel Jacob Rabin Krug, Cristiano Gobbi, Angelo Luiz |
author2_role |
author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Corrêa, Silma Alberton Marmitt, Gabriel Guterres Bom, Nicolau Molina Rosa, Aline Tais da Stedile, Fernanda Chiarello Radtke, Claudio Soares, Gabriel Vieira Baumvol, Israel Jacob Rabin Krug, Cristiano Gobbi, Angelo Luiz |
dc.subject.por.fl_str_mv |
Carbeto de silício Filmes finos dieletricos Óxido de alumínio Materiais nanoestruturados |
topic |
Carbeto de silício Filmes finos dieletricos Óxido de alumínio Materiais nanoestruturados |
description |
Experimental evidences of enhanced stability of Al2O3 /SiC structures following thermal annealing are presented. 5- and 40-nm-thick Al2O3 films evaporated on the Si- and C-terminated faces of 4H-SiC were annealed up to 1000 °C in different atmospheres, leading to crystallization and densification of Al2O3, with an increase in the band gap. Exposure to O2 at high temperatures produced SiO2 and AlSixOy at the Al2O3 /SiC interface, with less silicate on the Si-terminated face. Annealing in N2 before exposure to O2 hindered oxygen diffusion and exchange, leading to more stable thin film structures from the point of view of atomic transport. |
publishDate |
2009 |
dc.date.issued.fl_str_mv |
2009 |
dc.date.accessioned.fl_str_mv |
2016-05-24T02:10:59Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141737 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000714316 |
identifier_str_mv |
0003-6951 000714316 |
url |
http://hdl.handle.net/10183/141737 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. New York. Vol. 95, no. 5 (Aug. 2009), 051916, 3 p. |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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