Diffusion reaction of oxigen in aluminum oxide films on silicon
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/103933 |
Resumo: | Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the film surface was monitored by atomic force microscopy and it was seen to depend on annealing parameters. Areal densities and profiles of oxygen incorporated from the gas phase were determined by nuclear reaction techniques. A propagating front of incorporated oxygen from the gas/solid interface toward the film/ substrate interface was observed. This was modeled as a diffusion-reaction process, where isotopic exchange is the reaction channel. The model is capable of reproducing the observed ¹⁸O profiles and areal densities as well as their dependence on annealing parameters. |
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Rosa, Elisa Brod Oliveira daBaumvol, Israel Jacob RabinMorais, JonderAlmeida, Rita Maria Cunha dePapaleo, Ricardo MeurerStedile, Fernanda Chiarello2014-09-30T02:12:37Z20021098-0121http://hdl.handle.net/10183/103933000314677Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the film surface was monitored by atomic force microscopy and it was seen to depend on annealing parameters. Areal densities and profiles of oxygen incorporated from the gas phase were determined by nuclear reaction techniques. A propagating front of incorporated oxygen from the gas/solid interface toward the film/ substrate interface was observed. This was modeled as a diffusion-reaction process, where isotopic exchange is the reaction channel. The model is capable of reproducing the observed ¹⁸O profiles and areal densities as well as their dependence on annealing parameters.application/pdfengPhysical review. B, Condensed matter and materials physics. Melville. Vol. 65, no. 12 (Mar. 2002), 121303, 4 p.Filmes finosAluminaMicroscopia de força atômicaInterdifusao quimicaAnálise química nuclearOxigênioDiffusion reaction of oxigen in aluminum oxide films on siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000314677.pdf000314677.pdfTexto completo (inglês)application/pdf326908http://www.lume.ufrgs.br/bitstream/10183/103933/1/000314677.pdfbc2955b53be8cf1e96185eb8a89e278aMD51TEXT000314677.pdf.txt000314677.pdf.txtExtracted Texttext/plain18063http://www.lume.ufrgs.br/bitstream/10183/103933/2/000314677.pdf.txtf0f782acdbd7588bcf98df442e93ae4bMD52THUMBNAIL000314677.pdf.jpg000314677.pdf.jpgGenerated Thumbnailimage/jpeg2012http://www.lume.ufrgs.br/bitstream/10183/103933/3/000314677.pdf.jpg5a3ab3fc35ab08027370f3314d1e814bMD5310183/1039332024-03-29 06:19:08.305785oai:www.lume.ufrgs.br:10183/103933Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2024-03-29T09:19:08Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
title |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
spellingShingle |
Diffusion reaction of oxigen in aluminum oxide films on silicon Rosa, Elisa Brod Oliveira da Filmes finos Alumina Microscopia de força atômica Interdifusao quimica Análise química nuclear Oxigênio |
title_short |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
title_full |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
title_fullStr |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
title_full_unstemmed |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
title_sort |
Diffusion reaction of oxigen in aluminum oxide films on silicon |
author |
Rosa, Elisa Brod Oliveira da |
author_facet |
Rosa, Elisa Brod Oliveira da Baumvol, Israel Jacob Rabin Morais, Jonder Almeida, Rita Maria Cunha de Papaleo, Ricardo Meurer Stedile, Fernanda Chiarello |
author_role |
author |
author2 |
Baumvol, Israel Jacob Rabin Morais, Jonder Almeida, Rita Maria Cunha de Papaleo, Ricardo Meurer Stedile, Fernanda Chiarello |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Rosa, Elisa Brod Oliveira da Baumvol, Israel Jacob Rabin Morais, Jonder Almeida, Rita Maria Cunha de Papaleo, Ricardo Meurer Stedile, Fernanda Chiarello |
dc.subject.por.fl_str_mv |
Filmes finos Alumina Microscopia de força atômica Interdifusao quimica Análise química nuclear Oxigênio |
topic |
Filmes finos Alumina Microscopia de força atômica Interdifusao quimica Análise química nuclear Oxigênio |
description |
Aluminum oxide films deposited on silicon by atomic layer chemical vapor deposition were annealed in an ¹⁸O-enriched oxygen atmosphere under various conditions of temperature, time, and pressure. Cavity formation at the film surface was monitored by atomic force microscopy and it was seen to depend on annealing parameters. Areal densities and profiles of oxygen incorporated from the gas phase were determined by nuclear reaction techniques. A propagating front of incorporated oxygen from the gas/solid interface toward the film/ substrate interface was observed. This was modeled as a diffusion-reaction process, where isotopic exchange is the reaction channel. The model is capable of reproducing the observed ¹⁸O profiles and areal densities as well as their dependence on annealing parameters. |
publishDate |
2002 |
dc.date.issued.fl_str_mv |
2002 |
dc.date.accessioned.fl_str_mv |
2014-09-30T02:12:37Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/103933 |
dc.identifier.issn.pt_BR.fl_str_mv |
1098-0121 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000314677 |
identifier_str_mv |
1098-0121 000314677 |
url |
http://hdl.handle.net/10183/103933 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Physical review. B, Condensed matter and materials physics. Melville. Vol. 65, no. 12 (Mar. 2002), 121303, 4 p. |
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openAccess |
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