Electrical isolation of GaN by MeV ion irradiation
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141082 |
Resumo: | The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices. |
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Boudinov, Henri IvanovKucheyev, Sergei O.Williams, J.S.Jagadish, ChenupatiLi, Gang2016-05-14T02:07:45Z20010003-6951http://hdl.handle.net/10183/141082000288366The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.application/pdfengApplied physics letters. Melville. Vol. 78, no. 7 (Feb. 2001), p. 943-945Resistividade elétricaCompostos de galioSemicondutores iii-vEfeitos de feixe iônicoRecozimento térmico rápidoSemicondutores de gap largoElectrical isolation of GaN by MeV ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000288366.pdf000288366.pdfTexto completo (inglês)application/pdf396281http://www.lume.ufrgs.br/bitstream/10183/141082/1/000288366.pdfe9b88391ea39fa11b3447b9773717044MD51TEXT000288366.pdf.txt000288366.pdf.txtExtracted Texttext/plain16161http://www.lume.ufrgs.br/bitstream/10183/141082/2/000288366.pdf.txt880b740cc78a589df5d631d1f0c0c623MD52THUMBNAIL000288366.pdf.jpg000288366.pdf.jpgGenerated Thumbnailimage/jpeg2086http://www.lume.ufrgs.br/bitstream/10183/141082/3/000288366.pdf.jpgd2b385caf31ee9a73a1df470218796d2MD5310183/1410822020-01-16 05:09:14.949527oai:www.lume.ufrgs.br:10183/141082Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:09:14Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical isolation of GaN by MeV ion irradiation |
title |
Electrical isolation of GaN by MeV ion irradiation |
spellingShingle |
Electrical isolation of GaN by MeV ion irradiation Boudinov, Henri Ivanov Resistividade elétrica Compostos de galio Semicondutores iii-v Efeitos de feixe iônico Recozimento térmico rápido Semicondutores de gap largo |
title_short |
Electrical isolation of GaN by MeV ion irradiation |
title_full |
Electrical isolation of GaN by MeV ion irradiation |
title_fullStr |
Electrical isolation of GaN by MeV ion irradiation |
title_full_unstemmed |
Electrical isolation of GaN by MeV ion irradiation |
title_sort |
Electrical isolation of GaN by MeV ion irradiation |
author |
Boudinov, Henri Ivanov |
author_facet |
Boudinov, Henri Ivanov Kucheyev, Sergei O. Williams, J.S. Jagadish, Chenupati Li, Gang |
author_role |
author |
author2 |
Kucheyev, Sergei O. Williams, J.S. Jagadish, Chenupati Li, Gang |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Boudinov, Henri Ivanov Kucheyev, Sergei O. Williams, J.S. Jagadish, Chenupati Li, Gang |
dc.subject.por.fl_str_mv |
Resistividade elétrica Compostos de galio Semicondutores iii-v Efeitos de feixe iônico Recozimento térmico rápido Semicondutores de gap largo |
topic |
Resistividade elétrica Compostos de galio Semicondutores iii-v Efeitos de feixe iônico Recozimento térmico rápido Semicondutores de gap largo |
description |
The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices. |
publishDate |
2001 |
dc.date.issued.fl_str_mv |
2001 |
dc.date.accessioned.fl_str_mv |
2016-05-14T02:07:45Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141082 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000288366 |
identifier_str_mv |
0003-6951 000288366 |
url |
http://hdl.handle.net/10183/141082 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 78, no. 7 (Feb. 2001), p. 943-945 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
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Repositório Institucional da UFRGS |
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