Electrical isolation of InGaP by proton and helium ion irradiation

Detalhes bibliográficos
Autor(a) principal: Danilov, Iuri
Data de Publicação: 2002
Outros Autores: Souza, Joel Pereira de, Boudinov, Henri Ivanov, Bettini, Jefferson, Carvalho, Mauro Monteiro Garcia de
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95822
Resumo: Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C.
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spelling Danilov, IuriSouza, Joel Pereira deBoudinov, Henri IvanovBettini, JeffersonCarvalho, Mauro Monteiro Garcia de2014-05-31T02:06:43Z20020021-8979http://hdl.handle.net/10183/95822000334260Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C.application/pdfengJournal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265Densidade de portadoresCompostos de galioSemicondutores iii-vCompostos de indioEfeitos de feixe iônicoCamadas epitaxiais semicondutorasEstabilidade térmicaElectrical isolation of InGaP by proton and helium ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000334260.pdf000334260.pdfTexto completo (inglês)application/pdf220031http://www.lume.ufrgs.br/bitstream/10183/95822/1/000334260.pdf49a22bb2f34430a1fbe072412f6e4c86MD51TEXT000334260.pdf.txt000334260.pdf.txtExtracted Texttext/plain21904http://www.lume.ufrgs.br/bitstream/10183/95822/2/000334260.pdf.txt4cf55f80051ce8a405ee1845ee7be798MD52THUMBNAIL000334260.pdf.jpg000334260.pdf.jpgGenerated Thumbnailimage/jpeg1555http://www.lume.ufrgs.br/bitstream/10183/95822/3/000334260.pdf.jpg8585eac78e3ab748fdc9fc0b88690464MD5310183/958222018-10-15 08:19:33.117oai:www.lume.ufrgs.br:10183/95822Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:19:33Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical isolation of InGaP by proton and helium ion irradiation
title Electrical isolation of InGaP by proton and helium ion irradiation
spellingShingle Electrical isolation of InGaP by proton and helium ion irradiation
Danilov, Iuri
Densidade de portadores
Compostos de galio
Semicondutores iii-v
Compostos de indio
Efeitos de feixe iônico
Camadas epitaxiais semicondutoras
Estabilidade térmica
title_short Electrical isolation of InGaP by proton and helium ion irradiation
title_full Electrical isolation of InGaP by proton and helium ion irradiation
title_fullStr Electrical isolation of InGaP by proton and helium ion irradiation
title_full_unstemmed Electrical isolation of InGaP by proton and helium ion irradiation
title_sort Electrical isolation of InGaP by proton and helium ion irradiation
author Danilov, Iuri
author_facet Danilov, Iuri
Souza, Joel Pereira de
Boudinov, Henri Ivanov
Bettini, Jefferson
Carvalho, Mauro Monteiro Garcia de
author_role author
author2 Souza, Joel Pereira de
Boudinov, Henri Ivanov
Bettini, Jefferson
Carvalho, Mauro Monteiro Garcia de
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Danilov, Iuri
Souza, Joel Pereira de
Boudinov, Henri Ivanov
Bettini, Jefferson
Carvalho, Mauro Monteiro Garcia de
dc.subject.por.fl_str_mv Densidade de portadores
Compostos de galio
Semicondutores iii-v
Compostos de indio
Efeitos de feixe iônico
Camadas epitaxiais semicondutoras
Estabilidade térmica
topic Densidade de portadores
Compostos de galio
Semicondutores iii-v
Compostos de indio
Efeitos de feixe iônico
Camadas epitaxiais semicondutoras
Estabilidade térmica
description Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C.
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2014-05-31T02:06:43Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95822
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000334260
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url http://hdl.handle.net/10183/95822
dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265
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