Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers

Detalhes bibliográficos
Autor(a) principal: Lopes, João Marcelo Jordão
Data de Publicação: 2005
Outros Autores: Zawislak, Fernando Claudio, Fichtner, Paulo Fernando Papaleo, Lovey, Francisco Carlos, Condó, Adriana M.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141325
Resumo: Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures sTù700 °Cd lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.
id UFRGS-2_c4f5636a66d01b6f41fddcf3a9b17b4b
oai_identifier_str oai:www.lume.ufrgs.br:10183/141325
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Lopes, João Marcelo JordãoZawislak, Fernando ClaudioFichtner, Paulo Fernando PapaleoLovey, Francisco CarlosCondó, Adriana M.2016-05-19T02:09:48Z20050003-6951http://hdl.handle.net/10183/141325000529592Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures sTù700 °Cd lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.application/pdfengApplied physics letters. Melville. Vol. 86, no. 2 (Jan. 2005), 023101, 3 p.Filmes finos isolantesFotoluminescênciaCompostos de silícioEstanhoMicroscopia eletrônica de transmissãoTratamento térmicoEffect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layersEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000529592.pdf000529592.pdfTexto completo (inglês)application/pdf629638http://www.lume.ufrgs.br/bitstream/10183/141325/1/000529592.pdf811dc94933518d4e33d0864864146376MD51TEXT000529592.pdf.txt000529592.pdf.txtExtracted Texttext/plain14357http://www.lume.ufrgs.br/bitstream/10183/141325/2/000529592.pdf.txtaeb2ba3a5545cd9e8e46219d956efc11MD52THUMBNAIL000529592.pdf.jpg000529592.pdf.jpgGenerated Thumbnailimage/jpeg2224http://www.lume.ufrgs.br/bitstream/10183/141325/3/000529592.pdf.jpg8dbeeef6da61f830a8b350ea3dde274eMD5310183/1413252021-06-13 04:34:46.692558oai:www.lume.ufrgs.br:10183/141325Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:34:46Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
title Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
spellingShingle Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
Lopes, João Marcelo Jordão
Filmes finos isolantes
Fotoluminescência
Compostos de silício
Estanho
Microscopia eletrônica de transmissão
Tratamento térmico
title_short Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
title_full Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
title_fullStr Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
title_full_unstemmed Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
title_sort Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO/sub 2/ layers
author Lopes, João Marcelo Jordão
author_facet Lopes, João Marcelo Jordão
Zawislak, Fernando Claudio
Fichtner, Paulo Fernando Papaleo
Lovey, Francisco Carlos
Condó, Adriana M.
author_role author
author2 Zawislak, Fernando Claudio
Fichtner, Paulo Fernando Papaleo
Lovey, Francisco Carlos
Condó, Adriana M.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Lopes, João Marcelo Jordão
Zawislak, Fernando Claudio
Fichtner, Paulo Fernando Papaleo
Lovey, Francisco Carlos
Condó, Adriana M.
dc.subject.por.fl_str_mv Filmes finos isolantes
Fotoluminescência
Compostos de silício
Estanho
Microscopia eletrônica de transmissão
Tratamento térmico
topic Filmes finos isolantes
Fotoluminescência
Compostos de silício
Estanho
Microscopia eletrônica de transmissão
Tratamento térmico
description Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures sTù700 °Cd lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.
publishDate 2005
dc.date.issued.fl_str_mv 2005
dc.date.accessioned.fl_str_mv 2016-05-19T02:09:48Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141325
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000529592
identifier_str_mv 0003-6951
000529592
url http://hdl.handle.net/10183/141325
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 86, no. 2 (Jan. 2005), 023101, 3 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/141325/1/000529592.pdf
http://www.lume.ufrgs.br/bitstream/10183/141325/2/000529592.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/141325/3/000529592.pdf.jpg
bitstream.checksum.fl_str_mv 811dc94933518d4e33d0864864146376
aeb2ba3a5545cd9e8e46219d956efc11
8dbeeef6da61f830a8b350ea3dde274e
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1815447613806215168

Registros relacionados