Prolonged and rapid thermal annealing of boron implanted silicon
Autor(a) principal: | |
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Data de Publicação: | 1988 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95120 |
Resumo: | We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 10 14 cm-², 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, It IS not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (~250 °C/s) the samples underwent dunng the RT A cycle on the annealing behavior of implantation damage. |
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Peter, Celso R.Souza, Joel Pereira deHasenack, Claus Martin2014-05-13T02:03:41Z19880021-8979http://hdl.handle.net/10183/95120000014876We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 10 14 cm-², 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, It IS not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (~250 °C/s) the samples underwent dunng the RT A cycle on the annealing behavior of implantation damage.application/pdfengJournal of Applied Physics. Woodbury. Vol. 64, no. 5 (Sept. 1988), p. 2696-2699Implantação de íonsProlonged and rapid thermal annealing of boron implanted siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000014876.pdf000014876.pdfTexto completo (inglês)application/pdf672795http://www.lume.ufrgs.br/bitstream/10183/95120/1/000014876.pdff796e56fed8dc835cf3e83635795a746MD51TEXT000014876.pdf.txt000014876.pdf.txtExtracted Texttext/plain18447http://www.lume.ufrgs.br/bitstream/10183/95120/2/000014876.pdf.txt9b4806fc64068a5b1fc3bf57f7330c41MD52THUMBNAIL000014876.pdf.jpg000014876.pdf.jpgGenerated Thumbnailimage/jpeg1577http://www.lume.ufrgs.br/bitstream/10183/95120/3/000014876.pdf.jpg2e453c410ba8a7244f057c3ebb8d6f5bMD5310183/951202022-02-22 04:53:34.158428oai:www.lume.ufrgs.br:10183/95120Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:53:34Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Prolonged and rapid thermal annealing of boron implanted silicon |
title |
Prolonged and rapid thermal annealing of boron implanted silicon |
spellingShingle |
Prolonged and rapid thermal annealing of boron implanted silicon Peter, Celso R. Implantação de íons |
title_short |
Prolonged and rapid thermal annealing of boron implanted silicon |
title_full |
Prolonged and rapid thermal annealing of boron implanted silicon |
title_fullStr |
Prolonged and rapid thermal annealing of boron implanted silicon |
title_full_unstemmed |
Prolonged and rapid thermal annealing of boron implanted silicon |
title_sort |
Prolonged and rapid thermal annealing of boron implanted silicon |
author |
Peter, Celso R. |
author_facet |
Peter, Celso R. Souza, Joel Pereira de Hasenack, Claus Martin |
author_role |
author |
author2 |
Souza, Joel Pereira de Hasenack, Claus Martin |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Peter, Celso R. Souza, Joel Pereira de Hasenack, Claus Martin |
dc.subject.por.fl_str_mv |
Implantação de íons |
topic |
Implantação de íons |
description |
We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3 X 10 14 cm-², 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealIng (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, It IS not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (~250 °C/s) the samples underwent dunng the RT A cycle on the annealing behavior of implantation damage. |
publishDate |
1988 |
dc.date.issued.fl_str_mv |
1988 |
dc.date.accessioned.fl_str_mv |
2014-05-13T02:03:41Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95120 |
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0021-8979 |
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000014876 |
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http://hdl.handle.net/10183/95120 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of Applied Physics. Woodbury. Vol. 64, no. 5 (Sept. 1988), p. 2696-2699 |
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openAccess |
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