Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95407 |
Resumo: | Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er concentrations from 1018 up to 1020 Er/cm3. Cross-sectional transmission electron microscopy studies reveal very little structural damage for these elevated temperature implants up to an Er total fluence of 1.36 1014 Er/cm². No Er emission was observed from any of the as-implanted samples but it was observed after postimplantation annealings at 650 and 750 °C temperatures. The Er emission was significantly more intense after 650 °C anneals, for Be doped samples, and after 750 °C anneals for undoped samples. It appears on top of a broad background luminescence associated with midgap states. The Er emission intensity was found to scale linearly with the total Er implantation fluence up to Er concentration of ~ 1019 Er/cm3. Er precipitation was observed after 750 °C annealing for 1019 Er/cm3 samples, but could be observed for 1020 Er/cm3 Er-doped samples even after a 650 °C anneal. These precipitates are most likely ErAs. |
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Maltez, Rogério LuisLiliental-Weber, ZuzannaWashburn, J.Behar, MoniKlein, P.B.Specht, P.Weber, E.R.2014-05-20T02:04:50Z19990021-8979http://hdl.handle.net/10183/95407000235920Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er concentrations from 1018 up to 1020 Er/cm3. Cross-sectional transmission electron microscopy studies reveal very little structural damage for these elevated temperature implants up to an Er total fluence of 1.36 1014 Er/cm². No Er emission was observed from any of the as-implanted samples but it was observed after postimplantation annealings at 650 and 750 °C temperatures. The Er emission was significantly more intense after 650 °C anneals, for Be doped samples, and after 750 °C anneals for undoped samples. It appears on top of a broad background luminescence associated with midgap states. The Er emission intensity was found to scale linearly with the total Er implantation fluence up to Er concentration of ~ 1019 Er/cm3. Er precipitation was observed after 750 °C annealing for 1019 Er/cm3 samples, but could be observed for 1020 Er/cm3 Er-doped samples even after a 650 °C anneal. These precipitates are most likely ErAs.application/pdfengJournal of Applied Physics. Woodbury. Vol. 85, no. 2 (Jan. 1999), p. 1105-1113Implantação de íonsErbioBerilioArseneto de galioMicroscopia eletrônica de transmissãoTratamento térmicoStructural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAsEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000235920.pdf000235920.pdfTexto completo (inglês)application/pdf711799http://www.lume.ufrgs.br/bitstream/10183/95407/1/000235920.pdf484f5f76ade7fcaf3e5c089e9f7f6c77MD51TEXT000235920.pdf.txt000235920.pdf.txtExtracted Texttext/plain40619http://www.lume.ufrgs.br/bitstream/10183/95407/2/000235920.pdf.txtfb12091ebd9c3516e5cb9e2f3d8855fcMD52THUMBNAIL000235920.pdf.jpg000235920.pdf.jpgGenerated Thumbnailimage/jpeg1614http://www.lume.ufrgs.br/bitstream/10183/95407/3/000235920.pdf.jpg54439553f7c1646c17de185d99e47ff1MD5310183/954072022-02-22 05:00:40.045194oai:www.lume.ufrgs.br:10183/95407Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:00:40Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
title |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
spellingShingle |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs Maltez, Rogério Luis Implantação de íons Erbio Berilio Arseneto de galio Microscopia eletrônica de transmissão Tratamento térmico |
title_short |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
title_full |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
title_fullStr |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
title_full_unstemmed |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
title_sort |
Structural and photoluminescence studies of Er implated Be doped and undoped low-temperature grown GaAs |
author |
Maltez, Rogério Luis |
author_facet |
Maltez, Rogério Luis Liliental-Weber, Zuzanna Washburn, J. Behar, Moni Klein, P.B. Specht, P. Weber, E.R. |
author_role |
author |
author2 |
Liliental-Weber, Zuzanna Washburn, J. Behar, Moni Klein, P.B. Specht, P. Weber, E.R. |
author2_role |
author author author author author author |
dc.contributor.author.fl_str_mv |
Maltez, Rogério Luis Liliental-Weber, Zuzanna Washburn, J. Behar, Moni Klein, P.B. Specht, P. Weber, E.R. |
dc.subject.por.fl_str_mv |
Implantação de íons Erbio Berilio Arseneto de galio Microscopia eletrônica de transmissão Tratamento térmico |
topic |
Implantação de íons Erbio Berilio Arseneto de galio Microscopia eletrônica de transmissão Tratamento térmico |
description |
Characteristic 1.54 μm Er3+ emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er concentrations from 1018 up to 1020 Er/cm3. Cross-sectional transmission electron microscopy studies reveal very little structural damage for these elevated temperature implants up to an Er total fluence of 1.36 1014 Er/cm². No Er emission was observed from any of the as-implanted samples but it was observed after postimplantation annealings at 650 and 750 °C temperatures. The Er emission was significantly more intense after 650 °C anneals, for Be doped samples, and after 750 °C anneals for undoped samples. It appears on top of a broad background luminescence associated with midgap states. The Er emission intensity was found to scale linearly with the total Er implantation fluence up to Er concentration of ~ 1019 Er/cm3. Er precipitation was observed after 750 °C annealing for 1019 Er/cm3 samples, but could be observed for 1020 Er/cm3 Er-doped samples even after a 650 °C anneal. These precipitates are most likely ErAs. |
publishDate |
1999 |
dc.date.issued.fl_str_mv |
1999 |
dc.date.accessioned.fl_str_mv |
2014-05-20T02:04:50Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
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http://hdl.handle.net/10183/95407 |
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0021-8979 |
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000235920 |
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http://hdl.handle.net/10183/95407 |
dc.language.iso.fl_str_mv |
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dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of Applied Physics. Woodbury. Vol. 85, no. 2 (Jan. 1999), p. 1105-1113 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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