Thermal stability of plasma-nitrided aluminum oxide films on Si

• Autor(a) principal: Bastos, Karen Paz
• Data de Publicação: 2004
• Outros Autores: Pezzi, Rafael Peretti, Miotti, Leonardo, Soares, Gabriel Vieira, Driemeier, Carlos Eduardo, Morais, Jonder, Baumvol, Israel Jacob Rabin, Hinkle, C., Lucovsky, Gerald
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/141202
• topic: Compostos de alumínio; Semicondutores elementares; Nitretação; Análise química nuclear; Silício; Estabilidade térmica; Filmes finos

The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/ Si structures in comparison with non-nitrided Al2O3 /Si.