Thermal stability of plasma-nitrided aluminum oxide films on Si
Autor(a) principal: | |
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Data de Publicação: | 2004 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141202 |
Resumo: | The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/ Si structures in comparison with non-nitrided Al2O3 /Si. |
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Bastos, Karen PazPezzi, Rafael PerettiMiotti, LeonardoSoares, Gabriel VieiraDriemeier, Carlos EduardoMorais, JonderBaumvol, Israel Jacob RabinHinkle, C.Lucovsky, Gerald2016-05-17T02:07:19Z20040003-6951http://hdl.handle.net/10183/141202000397779The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/ Si structures in comparison with non-nitrided Al2O3 /Si.application/pdfengApplied physics letters. Melville. Vol. 84, no. 1 (Jan. 2004), p. 97-99Compostos de alumínioSemicondutores elementaresNitretaçãoAnálise química nuclearSilícioEstabilidade térmicaFilmes finosThermal stability of plasma-nitrided aluminum oxide films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000397779.pdf000397779.pdfTexto completo (inglês)application/pdf414458http://www.lume.ufrgs.br/bitstream/10183/141202/1/000397779.pdf7824b280b68466f52583a83cfc58e64fMD51TEXT000397779.pdf.txt000397779.pdf.txtExtracted Texttext/plain16958http://www.lume.ufrgs.br/bitstream/10183/141202/2/000397779.pdf.txt0185ecfa73c1f117b0e2dff29849707aMD52THUMBNAIL000397779.pdf.jpg000397779.pdf.jpgGenerated Thumbnailimage/jpeg2261http://www.lume.ufrgs.br/bitstream/10183/141202/3/000397779.pdf.jpgc3b2898205ca6382db8f4e7ffb127d1aMD5310183/1412022023-07-19 03:39:05.579553oai:www.lume.ufrgs.br:10183/141202Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-19T06:39:05Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
title |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
spellingShingle |
Thermal stability of plasma-nitrided aluminum oxide films on Si Bastos, Karen Paz Compostos de alumínio Semicondutores elementares Nitretação Análise química nuclear Silício Estabilidade térmica Filmes finos |
title_short |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
title_full |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
title_fullStr |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
title_full_unstemmed |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
title_sort |
Thermal stability of plasma-nitrided aluminum oxide films on Si |
author |
Bastos, Karen Paz |
author_facet |
Bastos, Karen Paz Pezzi, Rafael Peretti Miotti, Leonardo Soares, Gabriel Vieira Driemeier, Carlos Eduardo Morais, Jonder Baumvol, Israel Jacob Rabin Hinkle, C. Lucovsky, Gerald |
author_role |
author |
author2 |
Pezzi, Rafael Peretti Miotti, Leonardo Soares, Gabriel Vieira Driemeier, Carlos Eduardo Morais, Jonder Baumvol, Israel Jacob Rabin Hinkle, C. Lucovsky, Gerald |
author2_role |
author author author author author author author author |
dc.contributor.author.fl_str_mv |
Bastos, Karen Paz Pezzi, Rafael Peretti Miotti, Leonardo Soares, Gabriel Vieira Driemeier, Carlos Eduardo Morais, Jonder Baumvol, Israel Jacob Rabin Hinkle, C. Lucovsky, Gerald |
dc.subject.por.fl_str_mv |
Compostos de alumínio Semicondutores elementares Nitretação Análise química nuclear Silício Estabilidade térmica Filmes finos |
topic |
Compostos de alumínio Semicondutores elementares Nitretação Análise química nuclear Silício Estabilidade térmica Filmes finos |
description |
The effect of post-deposition rapid thermal annealing in vacuum and in dry O2 on the stability of remote plasma-assisted nitrided aluminum oxide films on silicon is investigated. The areal densities of Al, O, N, and Si were determined by nuclear reaction analysis and their concentration versus depth distributions by narrow nuclear reaction resonance profiling, with subnanometric depth resolution. Annealing in both vacuum and O2 atmospheres produced partial loss of N from the near-surface regions of the films and its transport into near-interface regions of the Si substrate. Oxygen from the gas phase was incorporated in the AlON films in exchange for O and N previously existing therein, as well as in the near-interface regions of the Si substrate, leading to oxynitridation of the substrate. Al and Si remained essentially immobile under rapid thermal processing, confirming that the presence of nitrogen improves the thermal stability characteristics of the AlON/ Si structures in comparison with non-nitrided Al2O3 /Si. |
publishDate |
2004 |
dc.date.issued.fl_str_mv |
2004 |
dc.date.accessioned.fl_str_mv |
2016-05-17T02:07:19Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
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publishedVersion |
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http://hdl.handle.net/10183/141202 |
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0003-6951 |
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000397779 |
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0003-6951 000397779 |
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http://hdl.handle.net/10183/141202 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 84, no. 1 (Jan. 2004), p. 97-99 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
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