Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/195390 |
Resumo: | In this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept. |
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Repositório Institucional da UNESP |
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2946 |
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Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology TransistorSilicon-On-Insulator (SOI)Tunnel-FETMOSFETReconfigurable transistordual technology transistorIn this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Sao Paulo, LSI, PSI, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, Carlos A. B.Agopian, Paula G. D. [UNESP]Martino, Joao A.IEEE2020-12-10T17:32:57Z2020-12-10T17:32:57Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.http://hdl.handle.net/11449/195390WOS:000534490900023Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)info:eu-repo/semantics/openAccess2021-10-23T08:25:12Zoai:repositorio.unesp.br:11449/195390Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:06:34.585539Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
title |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
spellingShingle |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor Mori, Carlos A. B. Silicon-On-Insulator (SOI) Tunnel-FET MOSFET Reconfigurable transistor dual technology transistor |
title_short |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
title_full |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
title_fullStr |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
title_full_unstemmed |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
title_sort |
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor |
author |
Mori, Carlos A. B. |
author_facet |
Mori, Carlos A. B. Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
author_role |
author |
author2 |
Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Mori, Carlos A. B. Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
dc.subject.por.fl_str_mv |
Silicon-On-Insulator (SOI) Tunnel-FET MOSFET Reconfigurable transistor dual technology transistor |
topic |
Silicon-On-Insulator (SOI) Tunnel-FET MOSFET Reconfigurable transistor dual technology transistor |
description |
In this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-01-01 2020-12-10T17:32:57Z 2020-12-10T17:32:57Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019. http://hdl.handle.net/11449/195390 WOS:000534490900023 |
identifier_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019. WOS:000534490900023 |
url |
http://hdl.handle.net/11449/195390 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
4 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129020770910208 |