The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.3791/60798 http://hdl.handle.net/11449/201853 |
Resumo: | Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 °C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results. |
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The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistorsAluminum oxideAnodizationANOVAChemistryDielectric layerIssue 159Thin-film transistorZinc oxideAluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 °C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results.Universidade Estadual PaulistaFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)School of Technology and Sciences São Paulo State University-UNESPScholl of Electronic Engineering Bangor UniversityInstitute of Geosciences and Exact Sciences São Paulo State University-UNESPSchool of Technology and Sciences São Paulo State University-UNESPInstitute of Geosciences and Exact Sciences São Paulo State University-UNESPFAPESP: 14/13904-8FAPESP: 16/03484-7FAPESP: 19/01671-2FAPESP: 19/05620-3FAPESP: 19/08019-9Universidade Estadual Paulista (Unesp)Bangor UniversityGomes, Tiago C. [UNESP]Kumar, DineshAlves, Neri [UNESP]Kettle, JeffFugikawa-Santos, Lucas [UNESP]2020-12-12T02:43:31Z2020-12-12T02:43:31Z2020-05-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1-8http://dx.doi.org/10.3791/60798Journal of Visualized Experiments, v. 2020, n. 159, p. 1-8, 2020.1940-087Xhttp://hdl.handle.net/11449/20185310.3791/607982-s2.0-850861352427607651111619269Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Visualized Experimentsinfo:eu-repo/semantics/openAccess2024-06-19T12:44:51Zoai:repositorio.unesp.br:11449/201853Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:30:20.676470Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
title |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
spellingShingle |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors Gomes, Tiago C. [UNESP] Aluminum oxide Anodization ANOVA Chemistry Dielectric layer Issue 159 Thin-film transistor Zinc oxide |
title_short |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
title_full |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
title_fullStr |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
title_full_unstemmed |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
title_sort |
The effect of anodization parameters on the aluminum oxide dielectric layer of thin-film transistors |
author |
Gomes, Tiago C. [UNESP] |
author_facet |
Gomes, Tiago C. [UNESP] Kumar, Dinesh Alves, Neri [UNESP] Kettle, Jeff Fugikawa-Santos, Lucas [UNESP] |
author_role |
author |
author2 |
Kumar, Dinesh Alves, Neri [UNESP] Kettle, Jeff Fugikawa-Santos, Lucas [UNESP] |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Bangor University |
dc.contributor.author.fl_str_mv |
Gomes, Tiago C. [UNESP] Kumar, Dinesh Alves, Neri [UNESP] Kettle, Jeff Fugikawa-Santos, Lucas [UNESP] |
dc.subject.por.fl_str_mv |
Aluminum oxide Anodization ANOVA Chemistry Dielectric layer Issue 159 Thin-film transistor Zinc oxide |
topic |
Aluminum oxide Anodization ANOVA Chemistry Dielectric layer Issue 159 Thin-film transistor Zinc oxide |
description |
Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 °C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-12T02:43:31Z 2020-12-12T02:43:31Z 2020-05-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.3791/60798 Journal of Visualized Experiments, v. 2020, n. 159, p. 1-8, 2020. 1940-087X http://hdl.handle.net/11449/201853 10.3791/60798 2-s2.0-85086135242 7607651111619269 |
url |
http://dx.doi.org/10.3791/60798 http://hdl.handle.net/11449/201853 |
identifier_str_mv |
Journal of Visualized Experiments, v. 2020, n. 159, p. 1-8, 2020. 1940-087X 10.3791/60798 2-s2.0-85086135242 7607651111619269 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Visualized Experiments |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1-8 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129526875553792 |