The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

Detalhes bibliográficos
Autor(a) principal: Teixeira, Fernando F.
Data de Publicação: 2017
Outros Autores: Agopian, Paula G. D. [UNESP], Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Martino, Joao A., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/160134
Resumo: the goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
id UNSP_364c097eed23710f6792195b477bd450
oai_identifier_str oai:repositorio.unesp.br:11449/160134
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistorsNanowireproton irradiationback leakage currentoxide chargerthe goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Joao Da Boa Vista, SP, BrazilCEA, LETI, Minatec Campus, Grenoble, FranceUniv Grenoble Alpes, Grenoble, FranceSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Joao Da Boa Vista, SP, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)CEAUniv Grenoble AlpesTeixeira, Fernando F.Agopian, Paula G. D. [UNESP]Barraud, SylvainVinet, MaudFaynot, OlivierMartino, Joao A.IEEE2018-11-26T15:47:36Z2018-11-26T15:47:36Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.http://hdl.handle.net/11449/160134WOS:00042652450005304969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sandsinfo:eu-repo/semantics/openAccess2021-10-23T21:47:14Zoai:repositorio.unesp.br:11449/160134Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:01:36.820814Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
spellingShingle The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
Teixeira, Fernando F.
Nanowire
proton irradiation
back leakage current
oxide charger
title_short The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_full The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_fullStr The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_full_unstemmed The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_sort The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
author Teixeira, Fernando F.
author_facet Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
IEEE
author_role author
author2 Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
IEEE
author2_role author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
CEA
Univ Grenoble Alpes
dc.contributor.author.fl_str_mv Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
IEEE
dc.subject.por.fl_str_mv Nanowire
proton irradiation
back leakage current
oxide charger
topic Nanowire
proton irradiation
back leakage current
oxide charger
description the goal of this work is analyze for the first time the low-energy proton irradiation effects on p and n- channel SOI Omega - Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
publishDate 2017
dc.date.none.fl_str_mv 2017-01-01
2018-11-26T15:47:36Z
2018-11-26T15:47:36Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
http://hdl.handle.net/11449/160134
WOS:000426524500053
0496909595465696
0000-0002-0886-7798
identifier_str_mv 2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands. New York: Ieee, 4 p., 2017.
WOS:000426524500053
0496909595465696
0000-0002-0886-7798
url http://hdl.handle.net/11449/160134
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2017 32nd Symposium On Microelectronics Technology And Devices (sbmicro): Chip On The Sands
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128447806963712

Registros relacionados