The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors

Detalhes bibliográficos
Autor(a) principal: Teixeira, Fernando F.
Data de Publicação: 2017
Outros Autores: Agopian, Paula G. D. [UNESP], Barraud, Sylvain, Vinet, Maud, Faynot, Olivier, Martino, Joao A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro.2017.8113022
http://hdl.handle.net/11449/170551
Resumo: The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
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spelling The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistorsback leakage currentNanowireoxide chargerproton irradiationThe goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.LSI/PSI/USP University of Sao PauloSao Paulo State University (UNESP) Campus of Sao Joao da Boa VistaCEA LETI Minatec Campus and University Grenoble AlpesSao Paulo State University (UNESP) Campus of Sao Joao da Boa VistaUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Minatec Campus and University Grenoble AlpesTeixeira, Fernando F.Agopian, Paula G. D. [UNESP]Barraud, SylvainVinet, MaudFaynot, OlivierMartino, Joao A.2018-12-11T16:51:16Z2018-12-11T16:51:16Z2017-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2017.8113022SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.http://hdl.handle.net/11449/17055110.1109/SBMicro.2017.81130222-s2.0-8504056869404969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Foruminfo:eu-repo/semantics/openAccess2021-10-23T21:47:13Zoai:repositorio.unesp.br:11449/170551Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:58:45.587208Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
spellingShingle The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
Teixeira, Fernando F.
back leakage current
Nanowire
oxide charger
proton irradiation
title_short The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_full The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_fullStr The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_full_unstemmed The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
title_sort The influence of low-energy proton irradiaiton on threshold voltage and tranconductance of nanowire SOI n and p-channel transistors
author Teixeira, Fernando F.
author_facet Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
author_role author
author2 Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Minatec Campus and University Grenoble Alpes
dc.contributor.author.fl_str_mv Teixeira, Fernando F.
Agopian, Paula G. D. [UNESP]
Barraud, Sylvain
Vinet, Maud
Faynot, Olivier
Martino, Joao A.
dc.subject.por.fl_str_mv back leakage current
Nanowire
oxide charger
proton irradiation
topic back leakage current
Nanowire
oxide charger
proton irradiation
description The goal of this work is analyze for the first time the low-energy proton irradiation elfects on p and n-channel SOI Ω-Gate Nanowire transistors for total ionization dose of 500 krad. After radiation, it is noticed a slight variation on a drain current and in a transconductance, for large devices, due to the back leakage current.
publishDate 2017
dc.date.none.fl_str_mv 2017-11-15
2018-12-11T16:51:16Z
2018-12-11T16:51:16Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro.2017.8113022
SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.
http://hdl.handle.net/11449/170551
10.1109/SBMicro.2017.8113022
2-s2.0-85040568694
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1109/SBMicro.2017.8113022
http://hdl.handle.net/11449/170551
identifier_str_mv SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum.
10.1109/SBMicro.2017.8113022
2-s2.0-85040568694
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2017 - 32nd Symposium on Microelectronics Technology and Devices: Chip on the Sands, co-located Symposia: 30th SBCCI - Circuits and Systems Design, 2nd INSCIT - Electronic Instrumentation, 7th WCAS - IC Design Cases and 17th SForum - Undergraduate-Student Forum
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128727768367104

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