OTA Performance Comparison Designed with Experimental NW-MOSFET and NW-TFET Devices

• Autor(a) principal: Nogueira, Alexandro De M.
• Data de Publicação: 2019
• Outros Autores: Agopian, Paula G. D. [UNESP], Rangel, Roberto, Martino, Joao A., Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine
• Tipo de documento: Artigo de conferência
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1109/S3S46989.2019.9320688; http://hdl.handle.net/11449/205175
• topic: analog circuit; lookup table; MOSFET; nanowire; OTA; TFET; ultra-low power

This paper presents, for the first time, the performance of an Operational Transconductance Amplifier (OTA) designed with the experimental data of Nanowire (NW) Si-Tunnel-FET compared to NW MOSFET devices. The experimental data of each device was used to feed the lookup table used in a Verilog-A model to simulate each OTA. The larger Miller capacitance of TFET device helps with feedback stability but results in a lower bandwidth than the MOSFET circuit. However, the TFET OTA circuit achieved an open loop gain of 94 dB and power consumption of only 0.5 μW, while the MOSFET OTA circuit achieved a gain of only 52 dB and power consumption of 131 μW for the same transistor efficiency (gm/ID). Therefore, the NW Si TFET OTA has greatly surpassed the NW MOSFET OTA in terms of gain and power, showing good prospect to be used in low frequency and ultra-low power applications.