Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ULIS.2017.7962614 http://hdl.handle.net/11449/169989 |
Resumo: | In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures. |
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Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperaturesAnalog ParametersIII-V materialsTFETTransistor efficiencyIn this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)LSI PSI USP University of Sao PauloImecSao Paulo State University (UNESP)E.E. Dept. KU LeuvenSao Paulo State University (UNESP)Universidade de São Paulo (USP)ImecUniversidade Estadual Paulista (Unesp)KU LeuvenBordallo, C.Martino, J. A.Agopian, P. G.D. [UNESP]Alian, A.Mols, Y.Rooyackers, R.Vandooren, A.Verhulst, A. S.Simoen, E.Claeys, C.Collaert, N.2018-12-11T16:48:36Z2018-12-11T16:48:36Z2017-06-29info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject109-112http://dx.doi.org/10.1109/ULIS.2017.7962614Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 109-112.http://hdl.handle.net/11449/16998910.1109/ULIS.2017.79626142-s2.0-8502673495304969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJoint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedingsinfo:eu-repo/semantics/openAccess2021-10-23T21:47:04Zoai:repositorio.unesp.br:11449/169989Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:03:36.742184Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
title |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
spellingShingle |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures Bordallo, C. Analog Parameters III-V materials TFET Transistor efficiency |
title_short |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_full |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_fullStr |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_full_unstemmed |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_sort |
Analysis of the transistor efficiency of gas phase Zn diffusion In0.53Ga0.47As nTFETs at different temperatures |
author |
Bordallo, C. |
author_facet |
Bordallo, C. Martino, J. A. Agopian, P. G.D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. |
author_role |
author |
author2 |
Martino, J. A. Agopian, P. G.D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. |
author2_role |
author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Imec Universidade Estadual Paulista (Unesp) KU Leuven |
dc.contributor.author.fl_str_mv |
Bordallo, C. Martino, J. A. Agopian, P. G.D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. |
dc.subject.por.fl_str_mv |
Analog Parameters III-V materials TFET Transistor efficiency |
topic |
Analog Parameters III-V materials TFET Transistor efficiency |
description |
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-06-29 2018-12-11T16:48:36Z 2018-12-11T16:48:36Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ULIS.2017.7962614 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 109-112. http://hdl.handle.net/11449/169989 10.1109/ULIS.2017.7962614 2-s2.0-85026734953 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1109/ULIS.2017.7962614 http://hdl.handle.net/11449/169989 |
identifier_str_mv |
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings, p. 109-112. 10.1109/ULIS.2017.7962614 2-s2.0-85026734953 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
109-112 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128602506526720 |