Low-Noise Amplifier for Deep-Brain Stimulation (DBS)

• Autor(a) principal: Nordi, Tiago Matheus
• Data de Publicação: 2022
• Outros Autores: Gounella, Rodrigo Henrique, Luppe, Maximiliam, Junior, João Navarro Soares, Fonoff, Erich Talamoni, Colombari, Eduardo [UNESP], Romero, Murilo Araujo, Do Carmo, João Paulo Pereira
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.3390/electronics11060939; http://hdl.handle.net/11449/234286
• topic: CMOS; Deep-brain stimulation (DBS); Implantable devices; Low-noise amplifier

Deep-brain stimulation (DBS) is an emerging research topic aiming to improve the quality of life of patients with brain diseases, and a great deal of effort has been focused on the development of implantable devices. This paper presents a low-noise amplifier (LNA) for the acquisition of biopotentials on DBS. This electronic module was designed in a low-voltage/low-power CMOS process, targeting implantable applications. The measurement results showed a gain of 38.6 dB and a −3 dB bandwidth of 2.3 kHz. The measurements also showed a power consumption of 2.8 µW. Simulations showed an input-referred noise of 6.2 µVRMS . The LNA occupies a microdevice area of 122 µm × 283 µm, supporting its application in implanted systems.