Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/1361-6641/ab9db5 http://hdl.handle.net/11449/195597 |
Resumo: | In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. Lookup tables with experimental data were used to model the transistors and simulate the OTAs. At the same dimensions and transistor efficiency region, the TFET OTAs have larger gain than the MOSFET circuit. The Ge-source TFET OTA presents the highest differential gain (105 dB), followed by the Si TFET (96 dB) and the SiGe-source TFET (90 dB), with the MOSFET presenting the lowest gain (51 dB). However, the MOSFET has the best gain-bandwidth product (GBW) (9.2 MHz) followed by the Ge-source TFET (1.6 MHz), the SiGe-source TFET (900 kHz) and the Si TFET (41 kHz). The second group of OTAs, where the same power consumption was considered and where the gain of the MOSFET OTA and the GBW of the TFETs' circuits were increased was also studied. The gain of the MOSFET OTA increased to 56 dB, but it is still lower than the TFET circuits (96, 90 and 102 dB for the Si TFET, SiGe-source TFET and Ge-source TFET, respectively). The GBW of the Si TFET, SiGe-source TFET and Ge-source TFET circuits increased to 71 kHz, 1 MHz, and 2 MHz, respectively. Nevertheless, the MOSFET OTA has the best GBW (4.7 MHz) again but being just 2.35 times the GBW of the Ge-source TFET case. Therefore, because of the high gain of the TFETs OTAs, they are indicated for low power, low-frequency applications, with the Ge-source TFET presenting a good compromise between gain and GBW. The circuits' linearity was also verified, and they demonstrate to be more dependent on bias choices than on the devices themselves. |
id |
UNSP_afded516751cfa93cab1800e8fe8f205 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/195597 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental datatunnel field effect transistornanowireoperational transconductance amplifierMOSFETlookup tableanalog circuitVerilog-AIn this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. Lookup tables with experimental data were used to model the transistors and simulate the OTAs. At the same dimensions and transistor efficiency region, the TFET OTAs have larger gain than the MOSFET circuit. The Ge-source TFET OTA presents the highest differential gain (105 dB), followed by the Si TFET (96 dB) and the SiGe-source TFET (90 dB), with the MOSFET presenting the lowest gain (51 dB). However, the MOSFET has the best gain-bandwidth product (GBW) (9.2 MHz) followed by the Ge-source TFET (1.6 MHz), the SiGe-source TFET (900 kHz) and the Si TFET (41 kHz). The second group of OTAs, where the same power consumption was considered and where the gain of the MOSFET OTA and the GBW of the TFETs' circuits were increased was also studied. The gain of the MOSFET OTA increased to 56 dB, but it is still lower than the TFET circuits (96, 90 and 102 dB for the Si TFET, SiGe-source TFET and Ge-source TFET, respectively). The GBW of the Si TFET, SiGe-source TFET and Ge-source TFET circuits increased to 71 kHz, 1 MHz, and 2 MHz, respectively. Nevertheless, the MOSFET OTA has the best GBW (4.7 MHz) again but being just 2.35 times the GBW of the Ge-source TFET case. Therefore, because of the high gain of the TFETs OTAs, they are indicated for low power, low-frequency applications, with the Ge-source TFET presenting a good compromise between gain and GBW. The circuits' linearity was also verified, and they demonstrate to be more dependent on bias choices than on the devices themselves.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIop Publishing LtdUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Moraes Nogueira, Alexandro deDer Agopian, Paula Ghedini [UNESP]Martino, Joao Antonio2020-12-10T17:40:00Z2020-12-10T17:40:00Z2020-09-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article9http://dx.doi.org/10.1088/1361-6641/ab9db5Semiconductor Science And Technology. Bristol: Iop Publishing Ltd, v. 35, n. 9, 9 p., 2020.0268-1242http://hdl.handle.net/11449/19559710.1088/1361-6641/ab9db5WOS:000560443900001Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSemiconductor Science And Technologyinfo:eu-repo/semantics/openAccess2021-10-23T08:18:16Zoai:repositorio.unesp.br:11449/195597Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:48:27.932141Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
title |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
spellingShingle |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data Moraes Nogueira, Alexandro de tunnel field effect transistor nanowire operational transconductance amplifier MOSFET lookup table analog circuit Verilog-A |
title_short |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
title_full |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
title_fullStr |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
title_full_unstemmed |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
title_sort |
Operational transconductance amplifier designed with nanowire tunnel-FET with Si, SiGe and Ge sources using experimental data |
author |
Moraes Nogueira, Alexandro de |
author_facet |
Moraes Nogueira, Alexandro de Der Agopian, Paula Ghedini [UNESP] Martino, Joao Antonio |
author_role |
author |
author2 |
Der Agopian, Paula Ghedini [UNESP] Martino, Joao Antonio |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Moraes Nogueira, Alexandro de Der Agopian, Paula Ghedini [UNESP] Martino, Joao Antonio |
dc.subject.por.fl_str_mv |
tunnel field effect transistor nanowire operational transconductance amplifier MOSFET lookup table analog circuit Verilog-A |
topic |
tunnel field effect transistor nanowire operational transconductance amplifier MOSFET lookup table analog circuit Verilog-A |
description |
In this paper operational transconductance amplifiers (OTA) were designed with nanowire (NW) tunnel field effect transistors (TFET) with different source materials (Si, SiGe, and Ge) and compared with NW Si MOSFET devices. Lookup tables with experimental data were used to model the transistors and simulate the OTAs. At the same dimensions and transistor efficiency region, the TFET OTAs have larger gain than the MOSFET circuit. The Ge-source TFET OTA presents the highest differential gain (105 dB), followed by the Si TFET (96 dB) and the SiGe-source TFET (90 dB), with the MOSFET presenting the lowest gain (51 dB). However, the MOSFET has the best gain-bandwidth product (GBW) (9.2 MHz) followed by the Ge-source TFET (1.6 MHz), the SiGe-source TFET (900 kHz) and the Si TFET (41 kHz). The second group of OTAs, where the same power consumption was considered and where the gain of the MOSFET OTA and the GBW of the TFETs' circuits were increased was also studied. The gain of the MOSFET OTA increased to 56 dB, but it is still lower than the TFET circuits (96, 90 and 102 dB for the Si TFET, SiGe-source TFET and Ge-source TFET, respectively). The GBW of the Si TFET, SiGe-source TFET and Ge-source TFET circuits increased to 71 kHz, 1 MHz, and 2 MHz, respectively. Nevertheless, the MOSFET OTA has the best GBW (4.7 MHz) again but being just 2.35 times the GBW of the Ge-source TFET case. Therefore, because of the high gain of the TFETs OTAs, they are indicated for low power, low-frequency applications, with the Ge-source TFET presenting a good compromise between gain and GBW. The circuits' linearity was also verified, and they demonstrate to be more dependent on bias choices than on the devices themselves. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12-10T17:40:00Z 2020-12-10T17:40:00Z 2020-09-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/1361-6641/ab9db5 Semiconductor Science And Technology. Bristol: Iop Publishing Ltd, v. 35, n. 9, 9 p., 2020. 0268-1242 http://hdl.handle.net/11449/195597 10.1088/1361-6641/ab9db5 WOS:000560443900001 |
url |
http://dx.doi.org/10.1088/1361-6641/ab9db5 http://hdl.handle.net/11449/195597 |
identifier_str_mv |
Semiconductor Science And Technology. Bristol: Iop Publishing Ltd, v. 35, n. 9, 9 p., 2020. 0268-1242 10.1088/1361-6641/ab9db5 WOS:000560443900001 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Semiconductor Science And Technology |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
9 |
dc.publisher.none.fl_str_mv |
Iop Publishing Ltd |
publisher.none.fl_str_mv |
Iop Publishing Ltd |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128982453846016 |