Análise de transistores FinFETs para aplicações em circuitos digitais básicos

• Autor(a) principal: Braga, Thales Mota
• Data de Publicação: 2021
• Tipo de documento: Trabalho de conclusão de curso
• Idioma: por
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://hdl.handle.net/11449/214090
• topic: Metal oxide semiconductors; Circuitos impressos; Eletrônica digital; Nanoeletrônica; Semicondutores; Semicondutores de óxido metálico

Currently, we are experiencing a technological revolution that requires integrated circuits with very high performance. To further improve this required performance, the main strategy was to reduce the size of the devices to promote a better integration of the devices generating more complex circuits. MOSFET technology has shown itself to be the most promising for this scaling since the 1970s as it allows the construction of fast switching transistors with low power loss and high scaling capacity. With the miniaturization of devices and the growing need to obtain more efficient devices, the multi-port technologies known as FinFET (Fin-Shaped Field Effect Transistor) have stood out due to the numerous benefits related to lower power consumption, higher speeds of processing and lower short channel effects compared to conventional MOS transistors (known as Bulk). In this work, the application of FinFET transistors in digital logic circuits was studied, with the NOT, NAND and NOR gates being analyzed through the main static and dynamic parameters. This study was based on the comparison of the logic gates implemented both in 3D technology (FinFET) and in the well-known conventional technology (Bulk MOS), to carry out a comparison and demonstrate that FinFET transistors, in addition to being of the nanometer order, have better performance than conventional MOS transistors.