Improved photoluminescence emission and gas sensor properties of ZnO thin films
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.ceramint.2016.05.148 http://hdl.handle.net/11449/178082 |
Resumo: | In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO4] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H2 sensitivity by a factor of two. |
id |
UNSP_ed31244828d477e61d03feaaf8fdb385 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/178082 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Improved photoluminescence emission and gas sensor properties of ZnO thin filmsGas sensor propertiesPhotoluminescence propertiesPressure-assisted thermal annealingThin filmsZnOIn this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO4] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H2 sensitivity by a factor of two.UNESP Instituto de QuímicaUTFPR Departamento de QuímicaUFSCar Departamento de QuímicaUSP Instituto de Física de São CarlosUTFPR Departamento de Engenharia de ProduçãoUNESP Instituto de QuímicaUniversidade Estadual Paulista (Unesp)UTFPRUniversidade Federal de São Carlos (UFSCar)Universidade de São Paulo (USP)Berger, D. [UNESP]de Moura, A. P. [UNESP]Oliveira, L. H. [UNESP]Bastos, W. B. [UNESP]La Porta, F. A.Rosa, I. L.V.Li, M. S.Tebcherani, S. M.Longo, E. [UNESP]Varela, J. A. [UNESP]2018-12-11T17:28:40Z2018-12-11T17:28:40Z2016-09-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article13555-13561application/pdfhttp://dx.doi.org/10.1016/j.ceramint.2016.05.148Ceramics International, v. 42, n. 12, p. 13555-13561, 2016.0272-8842http://hdl.handle.net/11449/17808210.1016/j.ceramint.2016.05.1482-s2.0-849751085302-s2.0-84975108530.pdfScopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengCeramics International0,784info:eu-repo/semantics/openAccess2023-10-20T06:05:24Zoai:repositorio.unesp.br:11449/178082Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-10-20T06:05:24Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
title |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
spellingShingle |
Improved photoluminescence emission and gas sensor properties of ZnO thin films Berger, D. [UNESP] Gas sensor properties Photoluminescence properties Pressure-assisted thermal annealing Thin films ZnO |
title_short |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
title_full |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
title_fullStr |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
title_full_unstemmed |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
title_sort |
Improved photoluminescence emission and gas sensor properties of ZnO thin films |
author |
Berger, D. [UNESP] |
author_facet |
Berger, D. [UNESP] de Moura, A. P. [UNESP] Oliveira, L. H. [UNESP] Bastos, W. B. [UNESP] La Porta, F. A. Rosa, I. L.V. Li, M. S. Tebcherani, S. M. Longo, E. [UNESP] Varela, J. A. [UNESP] |
author_role |
author |
author2 |
de Moura, A. P. [UNESP] Oliveira, L. H. [UNESP] Bastos, W. B. [UNESP] La Porta, F. A. Rosa, I. L.V. Li, M. S. Tebcherani, S. M. Longo, E. [UNESP] Varela, J. A. [UNESP] |
author2_role |
author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) UTFPR Universidade Federal de São Carlos (UFSCar) Universidade de São Paulo (USP) |
dc.contributor.author.fl_str_mv |
Berger, D. [UNESP] de Moura, A. P. [UNESP] Oliveira, L. H. [UNESP] Bastos, W. B. [UNESP] La Porta, F. A. Rosa, I. L.V. Li, M. S. Tebcherani, S. M. Longo, E. [UNESP] Varela, J. A. [UNESP] |
dc.subject.por.fl_str_mv |
Gas sensor properties Photoluminescence properties Pressure-assisted thermal annealing Thin films ZnO |
topic |
Gas sensor properties Photoluminescence properties Pressure-assisted thermal annealing Thin films ZnO |
description |
In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO4] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H2 sensitivity by a factor of two. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-09-01 2018-12-11T17:28:40Z 2018-12-11T17:28:40Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.ceramint.2016.05.148 Ceramics International, v. 42, n. 12, p. 13555-13561, 2016. 0272-8842 http://hdl.handle.net/11449/178082 10.1016/j.ceramint.2016.05.148 2-s2.0-84975108530 2-s2.0-84975108530.pdf |
url |
http://dx.doi.org/10.1016/j.ceramint.2016.05.148 http://hdl.handle.net/11449/178082 |
identifier_str_mv |
Ceramics International, v. 42, n. 12, p. 13555-13561, 2016. 0272-8842 10.1016/j.ceramint.2016.05.148 2-s2.0-84975108530 2-s2.0-84975108530.pdf |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Ceramics International 0,784 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
13555-13561 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1797789451568545792 |