On the assessment of electrically active defects in high-mobility materials and devices

Detalhes bibliográficos
Autor(a) principal: Simoen, Eddy
Data de Publicação: 2016
Outros Autores: Eneman, Geert, Oliveira, Alberto Vinicius de, Ni, Kai, Mitard, Jerome, Witters, Liesbeth, Der Agopian, Paula Ghedini [UNESP], Martino, Joao Antonio, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Collaert, Nadine, Thean, Aaron, Claeys, Cor, Jiang, Y. L., Tang, T. A., Huang, R.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/184616
Resumo: A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
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spelling On the assessment of electrically active defects in high-mobility materials and devicesA possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.IMEC, Kapeldreef 75, B-300 Leuven, BelgiumUniv Ghent, Depart Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, BelgiumUniv Sao Paulo, Sao Paulo, BrazilVanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USAUniv Estadual Paulista, Sao Paulo, BrazilKatholieke Univ Leuven, EE Depart, Kasteelpk Arenberg 10, B-3001 Leuven, BelgiumUniv Estadual Paulista, Sao Paulo, BrazilIeeeIMECUniv GhentUniversidade de São Paulo (USP)Vanderbilt UnivUniversidade Estadual Paulista (Unesp)Katholieke Univ LeuvenSimoen, EddyEneman, GeertOliveira, Alberto Vinicius deNi, KaiMitard, JeromeWitters, LiesbethDer Agopian, Paula Ghedini [UNESP]Martino, Joao AntonioFleetwood, Daniel M.Schrimpf, Ronald D.Reed, Robert A.Collaert, NadineThean, AaronClaeys, CorJiang, Y. L.Tang, T. A.Huang, R.2019-10-04T12:15:15Z2019-10-04T12:15:15Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject300-3032016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.http://hdl.handle.net/11449/184616WOS:000478951000079Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict)info:eu-repo/semantics/openAccess2021-10-22T21:15:50Zoai:repositorio.unesp.br:11449/184616Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T21:15:50Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv On the assessment of electrically active defects in high-mobility materials and devices
title On the assessment of electrically active defects in high-mobility materials and devices
spellingShingle On the assessment of electrically active defects in high-mobility materials and devices
Simoen, Eddy
title_short On the assessment of electrically active defects in high-mobility materials and devices
title_full On the assessment of electrically active defects in high-mobility materials and devices
title_fullStr On the assessment of electrically active defects in high-mobility materials and devices
title_full_unstemmed On the assessment of electrically active defects in high-mobility materials and devices
title_sort On the assessment of electrically active defects in high-mobility materials and devices
author Simoen, Eddy
author_facet Simoen, Eddy
Eneman, Geert
Oliveira, Alberto Vinicius de
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
Jiang, Y. L.
Tang, T. A.
Huang, R.
author_role author
author2 Eneman, Geert
Oliveira, Alberto Vinicius de
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
Jiang, Y. L.
Tang, T. A.
Huang, R.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv IMEC
Univ Ghent
Universidade de São Paulo (USP)
Vanderbilt Univ
Universidade Estadual Paulista (Unesp)
Katholieke Univ Leuven
dc.contributor.author.fl_str_mv Simoen, Eddy
Eneman, Geert
Oliveira, Alberto Vinicius de
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
Jiang, Y. L.
Tang, T. A.
Huang, R.
description A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
publishDate 2016
dc.date.none.fl_str_mv 2016-01-01
2019-10-04T12:15:15Z
2019-10-04T12:15:15Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.
http://hdl.handle.net/11449/184616
WOS:000478951000079
identifier_str_mv 2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.
WOS:000478951000079
url http://hdl.handle.net/11449/184616
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 300-303
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
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