On the assessment of electrically active defects in high-mobility materials and devices

Detalhes bibliográficos
Autor(a) principal: Simoen, Eddy
Data de Publicação: 2017
Outros Autores: Eneman, Geert, De Oliveira, Alberto Vinicius, Ni, Kai, Mitard, Jerome, Witters, Liesbeth, Der Agopian, Paula Ghedini [UNESP], Martino, Joao Antonio, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Collaert, Nadine, Thean, Aaron, Claeys, Cor
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ICSICT.2016.7998903
http://hdl.handle.net/11449/170090
Resumo: A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
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spelling On the assessment of electrically active defects in high-mobility materials and devicesA possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.Imec, Kapeldreef 75Ghent University Depart. Solid State Sciences, Krijgslaan 28 1S1University of Sao PauloDepartment of Electrical Engineering and Computer Science Vanderbilt UniversityUNESPEE Depart. KU Leuven, Kasteelpark Arenberg 10UNESPImecGhent UniversityUniversidade de São Paulo (USP)Vanderbilt UniversityUniversidade Estadual Paulista (Unesp)KU LeuvenSimoen, EddyEneman, GeertDe Oliveira, Alberto ViniciusNi, KaiMitard, JeromeWitters, LiesbethDer Agopian, Paula Ghedini [UNESP]Martino, Joao AntonioFleetwood, Daniel M.Schrimpf, Ronald D.Reed, Robert A.Collaert, NadineThean, AaronClaeys, Cor2018-12-11T16:49:13Z2018-12-11T16:49:13Z2017-07-31info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject300-303http://dx.doi.org/10.1109/ICSICT.2016.79989032016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.http://hdl.handle.net/11449/17009010.1109/ICSICT.2016.79989032-s2.0-85028684734Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedingsinfo:eu-repo/semantics/openAccess2021-10-23T21:47:01Zoai:repositorio.unesp.br:11449/170090Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:38:50.327624Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv On the assessment of electrically active defects in high-mobility materials and devices
title On the assessment of electrically active defects in high-mobility materials and devices
spellingShingle On the assessment of electrically active defects in high-mobility materials and devices
Simoen, Eddy
title_short On the assessment of electrically active defects in high-mobility materials and devices
title_full On the assessment of electrically active defects in high-mobility materials and devices
title_fullStr On the assessment of electrically active defects in high-mobility materials and devices
title_full_unstemmed On the assessment of electrically active defects in high-mobility materials and devices
title_sort On the assessment of electrically active defects in high-mobility materials and devices
author Simoen, Eddy
author_facet Simoen, Eddy
Eneman, Geert
De Oliveira, Alberto Vinicius
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
author_role author
author2 Eneman, Geert
De Oliveira, Alberto Vinicius
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Imec
Ghent University
Universidade de São Paulo (USP)
Vanderbilt University
Universidade Estadual Paulista (Unesp)
KU Leuven
dc.contributor.author.fl_str_mv Simoen, Eddy
Eneman, Geert
De Oliveira, Alberto Vinicius
Ni, Kai
Mitard, Jerome
Witters, Liesbeth
Der Agopian, Paula Ghedini [UNESP]
Martino, Joao Antonio
Fleetwood, Daniel M.
Schrimpf, Ronald D.
Reed, Robert A.
Collaert, Nadine
Thean, Aaron
Claeys, Cor
description A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.
publishDate 2017
dc.date.none.fl_str_mv 2017-07-31
2018-12-11T16:49:13Z
2018-12-11T16:49:13Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ICSICT.2016.7998903
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.
http://hdl.handle.net/11449/170090
10.1109/ICSICT.2016.7998903
2-s2.0-85028684734
url http://dx.doi.org/10.1109/ICSICT.2016.7998903
http://hdl.handle.net/11449/170090
identifier_str_mv 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.
10.1109/ICSICT.2016.7998903
2-s2.0-85028684734
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 300-303
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128393661644800

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