Influence of low energy argon plasma treatment on the moisture barrier performance of hot wire-CVD grown SiNx multilayers

• Autor(a) principal: Majee, Subimal
• Data de Publicação: 2014
• Outros Autores: Cerqueira, M. F., Tondelier, Denis, Geffroy, Bernard, Bonnassieux, Yvan, Alpuim, P., Bourée, Jean Eric
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/32819
• topic: Silicon nitride; Ar-plasma treatment; Permeation barrier; HW-CVD; Engenharia e Tecnologia::Engenharia dos Materiais; Science & Technology

The reliability and stability are key issues for the commercial utilization of organic photovoltaic devices based on flexible polymer substrates. To increase the shelf-lifetime of these devices, transparent moisture barriers of silicon nitride (SiNx) films are deposited at low temperature by hot wire CVD (HW-CVD) process. Instead of the conventional route based on organic/inorganic hybrid structures, this work defines a new route consisting in depositing multilayer stacks of SiNx thin films, each single layer being treated by argon plasma. The plasma treatment allows creating smoother surface and surface atom rearrangement. We define a critical thickness of the single layer film and focus our attention on the effect of increasing the number of SiNx single-layers on the barrier properties. A water vapor transmission rate (WVTR) of 2 x 10-4 g/(m2 day) is reported for SiNx multilayer stack and a physical interpretation of the plasma treatment effect is given.