Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells

Detalhes bibliográficos
Autor(a) principal: Alves, Marina
Data de Publicação: 2023
Outros Autores: Brito, Daniel, Carneiro, Joaquim A. O., Teixeira, Vasco M. P., Sadewasser, Sascha
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/84557
Resumo: Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.
id RCAP_c0bcdffd979310b0b1afc68f35b70fec
oai_identifier_str oai:repositorium.sdum.uminho.pt:1822/84557
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cellsIndium oxideHydrogen-doped indium oxideSputteringTransparent conductive oxideSheet resistanceEngenharia e Tecnologia::Engenharia dos MateriaisScience & TechnologyEnergias renováveis e acessíveisTypical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.This work was supported by the project “Semi-Transparent Solar cells for building integrated photovoltaics (STAR-SOL)”, funded by FCT – Fundação para a Ciência e a Tecnologia (FCT‐FNR/0001/2018). Marina Alves thanks the Fundação para a Ciência e a Tecnologia (FCT), Portugal for the PhD Grant (2020.06063.BD).ElsevierUniversidade do MinhoAlves, MarinaBrito, DanielCarneiro, Joaquim A. O.Teixeira, Vasco M. P.Sadewasser, Sascha2023-04-062023-04-06T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/84557engAlves, M., Brito, D., Carneiro, J., Teixeira, V., & Sadewasser, S. (2023, June). Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells. Thin Solid Films. Elsevier BV. http://doi.org/10.1016/j.tsf.2023.1398400040-60901879-273110.1016/j.tsf.2023.139840https://www.sciencedirect.com/science/article/pii/S0040609023001700info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:51:14Zoai:repositorium.sdum.uminho.pt:1822/84557Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:50:06.096156Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
title Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
spellingShingle Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
Alves, Marina
Indium oxide
Hydrogen-doped indium oxide
Sputtering
Transparent conductive oxide
Sheet resistance
Engenharia e Tecnologia::Engenharia dos Materiais
Science & Technology
Energias renováveis e acessíveis
title_short Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
title_full Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
title_fullStr Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
title_full_unstemmed Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
title_sort Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
author Alves, Marina
author_facet Alves, Marina
Brito, Daniel
Carneiro, Joaquim A. O.
Teixeira, Vasco M. P.
Sadewasser, Sascha
author_role author
author2 Brito, Daniel
Carneiro, Joaquim A. O.
Teixeira, Vasco M. P.
Sadewasser, Sascha
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Alves, Marina
Brito, Daniel
Carneiro, Joaquim A. O.
Teixeira, Vasco M. P.
Sadewasser, Sascha
dc.subject.por.fl_str_mv Indium oxide
Hydrogen-doped indium oxide
Sputtering
Transparent conductive oxide
Sheet resistance
Engenharia e Tecnologia::Engenharia dos Materiais
Science & Technology
Energias renováveis e acessíveis
topic Indium oxide
Hydrogen-doped indium oxide
Sputtering
Transparent conductive oxide
Sheet resistance
Engenharia e Tecnologia::Engenharia dos Materiais
Science & Technology
Energias renováveis e acessíveis
description Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.
publishDate 2023
dc.date.none.fl_str_mv 2023-04-06
2023-04-06T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/84557
url https://hdl.handle.net/1822/84557
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Alves, M., Brito, D., Carneiro, J., Teixeira, V., & Sadewasser, S. (2023, June). Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells. Thin Solid Films. Elsevier BV. http://doi.org/10.1016/j.tsf.2023.139840
0040-6090
1879-2731
10.1016/j.tsf.2023.139840
https://www.sciencedirect.com/science/article/pii/S0040609023001700
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799133084259450880

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