Electron field emission measurements from boron-doped CVD diamond on tantalum

Detalhes bibliográficos
Autor(a) principal: Gonçalves,J. A. N.
Data de Publicação: 2003
Outros Autores: Sandonato,G. M., Iha,K.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006
Resumo: Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
id SBF-2_fd0083d0f72f564ac8e833a65f2e0489
oai_identifier_str oai:scielo:S0103-97332003000100006
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Electron field emission measurements from boron-doped CVD diamond on tantalumBoron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.Sociedade Brasileira de Física2003-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006Brazilian Journal of Physics v.33 n.1 2003reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332003000100006info:eu-repo/semantics/openAccessGonçalves,J. A. N.Sandonato,G. M.Iha,K.eng2003-04-23T00:00:00Zoai:scielo:S0103-97332003000100006Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2003-04-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Electron field emission measurements from boron-doped CVD diamond on tantalum
title Electron field emission measurements from boron-doped CVD diamond on tantalum
spellingShingle Electron field emission measurements from boron-doped CVD diamond on tantalum
Gonçalves,J. A. N.
title_short Electron field emission measurements from boron-doped CVD diamond on tantalum
title_full Electron field emission measurements from boron-doped CVD diamond on tantalum
title_fullStr Electron field emission measurements from boron-doped CVD diamond on tantalum
title_full_unstemmed Electron field emission measurements from boron-doped CVD diamond on tantalum
title_sort Electron field emission measurements from boron-doped CVD diamond on tantalum
author Gonçalves,J. A. N.
author_facet Gonçalves,J. A. N.
Sandonato,G. M.
Iha,K.
author_role author
author2 Sandonato,G. M.
Iha,K.
author2_role author
author
dc.contributor.author.fl_str_mv Gonçalves,J. A. N.
Sandonato,G. M.
Iha,K.
description Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractometry and current voltage measurements. The UPS measurement shows that the work function (phi) without electric field is about 3.9 eV . The field-emission current-voltage measurements indicate a threshold voltage ranging from 8.97x106 to 9.64x106 V=m and a work function (phi) about 0.3 eV . These results show that boron doped diamond films exhibit a negative electron affinity in high electric field.
publishDate 2003
dc.date.none.fl_str_mv 2003-03-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100006
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332003000100006
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.33 n.1 2003
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734860109348864