Dopants redistribution during titanium-disilicide formation by rapid thermal processing

Detalhes bibliográficos
Autor(a) principal: Pasa, Andre Avelino
Data de Publicação: 1987
Outros Autores: Souza, Joel Pereira de, Baumvol, Israel Jacob Rabin, Freire Junior, Fernando Leite
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95359
Resumo: Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
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spelling Pasa, Andre AvelinoSouza, Joel Pereira deBaumvol, Israel Jacob RabinFreire Junior, Fernando Leite2014-05-17T02:06:52Z19870021-8979http://hdl.handle.net/10183/95359000112930Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.application/pdfengJournal of Applied Physics. Woodbury. Vol. 61, n. 3 (Feb. 1987), p. 1228-1230Física da matéria condensadaSemicondutoresDopagem de semicondutoresDopants redistribution during titanium-disilicide formation by rapid thermal processingEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000112930.pdf000112930.pdfTexto completo (inglês)application/pdf363358http://www.lume.ufrgs.br/bitstream/10183/95359/1/000112930.pdfedc8e0cf51a98263f7dffd8c5ba07f5cMD51TEXT000112930.pdf.txt000112930.pdf.txtExtracted Texttext/plain13846http://www.lume.ufrgs.br/bitstream/10183/95359/2/000112930.pdf.txt738ba09e05c4a002ad789ac22de23dbeMD52THUMBNAIL000112930.pdf.jpg000112930.pdf.jpgGenerated Thumbnailimage/jpeg1543http://www.lume.ufrgs.br/bitstream/10183/95359/3/000112930.pdf.jpg66d22cf1ba8dd9da1e9fdf87f3be971fMD5310183/953592018-10-08 09:02:51.576oai:www.lume.ufrgs.br:10183/95359Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-08T12:02:51Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Dopants redistribution during titanium-disilicide formation by rapid thermal processing
title Dopants redistribution during titanium-disilicide formation by rapid thermal processing
spellingShingle Dopants redistribution during titanium-disilicide formation by rapid thermal processing
Pasa, Andre Avelino
Física da matéria condensada
Semicondutores
Dopagem de semicondutores
title_short Dopants redistribution during titanium-disilicide formation by rapid thermal processing
title_full Dopants redistribution during titanium-disilicide formation by rapid thermal processing
title_fullStr Dopants redistribution during titanium-disilicide formation by rapid thermal processing
title_full_unstemmed Dopants redistribution during titanium-disilicide formation by rapid thermal processing
title_sort Dopants redistribution during titanium-disilicide formation by rapid thermal processing
author Pasa, Andre Avelino
author_facet Pasa, Andre Avelino
Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Freire Junior, Fernando Leite
author_role author
author2 Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Freire Junior, Fernando Leite
author2_role author
author
author
dc.contributor.author.fl_str_mv Pasa, Andre Avelino
Souza, Joel Pereira de
Baumvol, Israel Jacob Rabin
Freire Junior, Fernando Leite
dc.subject.por.fl_str_mv Física da matéria condensada
Semicondutores
Dopagem de semicondutores
topic Física da matéria condensada
Semicondutores
Dopagem de semicondutores
description Redistribution of implanted As (5 X 10 15 cm-², 150 keV) and Sb ( 1 X 10 15 cm-², 200 keV) due to TiSi2 formation by rapid thermal processing was investigated by means of backscattering spectroscopy. By choosing properly the rapid thermal processing parameters, low resistance uniform silicides layers (typically 14 μΩ cm) were obtained, and dopant loss by out-diffusion and redistribution of the dopant were made negligible. High peak concentrations of dopant within silicon substrate, beneath the silicide, were obtained for all processing times.
publishDate 1987
dc.date.issued.fl_str_mv 1987
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95359
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000112930
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 61, n. 3 (Feb. 1987), p. 1228-1230
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