Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation

Detalhes bibliográficos
Autor(a) principal: Van Lippen, Twan
Data de Publicação: 2002
Outros Autores: Boudinov, Henri Ivanov, Tan, Hoe H., Jagadish, Chenupati
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141219
Resumo: The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability.
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spelling Van Lippen, TwanBoudinov, Henri IvanovTan, Hoe H.Jagadish, Chenupati2016-05-17T02:07:27Z20020003-6951http://hdl.handle.net/10183/141219000313579The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability.application/pdfengApplied physics letters. Melville. Vol. 80, no. 2 (Jan. 2002), p. 264-266Compostos de alumínioDensidade de portadoresNíveis profundosEstabilidade térmicaElectrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000313579.pdf000313579.pdfTexto completo (inglês)application/pdf405722http://www.lume.ufrgs.br/bitstream/10183/141219/1/000313579.pdfc195192544649712911d9c2bc1e5c2b2MD51TEXT000313579.pdf.txt000313579.pdf.txtExtracted Texttext/plain15394http://www.lume.ufrgs.br/bitstream/10183/141219/2/000313579.pdf.txt707d66176611f18590f7bbe019947da5MD52THUMBNAIL000313579.pdf.jpg000313579.pdf.jpgGenerated Thumbnailimage/jpeg2075http://www.lume.ufrgs.br/bitstream/10183/141219/3/000313579.pdf.jpgeff10058001c3cfcd5afad20121258ebMD5310183/1412192020-01-16 05:08:38.35895oai:www.lume.ufrgs.br:10183/141219Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:08:38Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
title Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
spellingShingle Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
Van Lippen, Twan
Compostos de alumínio
Densidade de portadores
Níveis profundos
Estabilidade térmica
title_short Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
title_full Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
title_fullStr Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
title_full_unstemmed Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
title_sort Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
author Van Lippen, Twan
author_facet Van Lippen, Twan
Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
author_role author
author2 Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
author2_role author
author
author
dc.contributor.author.fl_str_mv Van Lippen, Twan
Boudinov, Henri Ivanov
Tan, Hoe H.
Jagadish, Chenupati
dc.subject.por.fl_str_mv Compostos de alumínio
Densidade de portadores
Níveis profundos
Estabilidade térmica
topic Compostos de alumínio
Densidade de portadores
Níveis profundos
Estabilidade térmica
description The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability.
publishDate 2002
dc.date.issued.fl_str_mv 2002
dc.date.accessioned.fl_str_mv 2016-05-17T02:07:27Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141219
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
dc.identifier.nrb.pt_BR.fl_str_mv 000313579
identifier_str_mv 0003-6951
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url http://hdl.handle.net/10183/141219
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Melville. Vol. 80, no. 2 (Jan. 2002), p. 264-266
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