Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation
Autor(a) principal: | |
---|---|
Data de Publicação: | 2002 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/141219 |
Resumo: | The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. |
id |
UFRGS-2_9a5394457c2bd3d57ad7f15ef9cd3da3 |
---|---|
oai_identifier_str |
oai:www.lume.ufrgs.br:10183/141219 |
network_acronym_str |
UFRGS-2 |
network_name_str |
Repositório Institucional da UFRGS |
repository_id_str |
|
spelling |
Van Lippen, TwanBoudinov, Henri IvanovTan, Hoe H.Jagadish, Chenupati2016-05-17T02:07:27Z20020003-6951http://hdl.handle.net/10183/141219000313579The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability.application/pdfengApplied physics letters. Melville. Vol. 80, no. 2 (Jan. 2002), p. 264-266Compostos de alumínioDensidade de portadoresNíveis profundosEstabilidade térmicaElectrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000313579.pdf000313579.pdfTexto completo (inglês)application/pdf405722http://www.lume.ufrgs.br/bitstream/10183/141219/1/000313579.pdfc195192544649712911d9c2bc1e5c2b2MD51TEXT000313579.pdf.txt000313579.pdf.txtExtracted Texttext/plain15394http://www.lume.ufrgs.br/bitstream/10183/141219/2/000313579.pdf.txt707d66176611f18590f7bbe019947da5MD52THUMBNAIL000313579.pdf.jpg000313579.pdf.jpgGenerated Thumbnailimage/jpeg2075http://www.lume.ufrgs.br/bitstream/10183/141219/3/000313579.pdf.jpgeff10058001c3cfcd5afad20121258ebMD5310183/1412192020-01-16 05:08:38.35895oai:www.lume.ufrgs.br:10183/141219Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2020-01-16T07:08:38Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
title |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
spellingShingle |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation Van Lippen, Twan Compostos de alumínio Densidade de portadores Níveis profundos Estabilidade térmica |
title_short |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
title_full |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
title_fullStr |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
title_full_unstemmed |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
title_sort |
Electrical isolation of Al/sub x/Ga/sub 1-x/As by ion irradiation |
author |
Van Lippen, Twan |
author_facet |
Van Lippen, Twan Boudinov, Henri Ivanov Tan, Hoe H. Jagadish, Chenupati |
author_role |
author |
author2 |
Boudinov, Henri Ivanov Tan, Hoe H. Jagadish, Chenupati |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Van Lippen, Twan Boudinov, Henri Ivanov Tan, Hoe H. Jagadish, Chenupati |
dc.subject.por.fl_str_mv |
Compostos de alumínio Densidade de portadores Níveis profundos Estabilidade térmica |
topic |
Compostos de alumínio Densidade de portadores Níveis profundos Estabilidade térmica |
description |
The evolution of sheet resistance Rs of n-type and p-type conductive AlxGa12xAs layers (x=0.3, 0.6, and 1.0) during proton irradiation was investigated. The threshold dose Dth to convert a conductive layer to a highly resistive one is slightly different for n- and p-type samples with similar initial free carrier concentration and does not depend on the Al content. The thermal stability of the isolation, i.e., the temperature range for which the Rs is maintained at '109 V/sq, was found to be dependent on the ratio of the carrier trap concentration to the original carrier concentration. The thermal stability of isolated p-type samples is limited to temperatures lower than 450 °C. The temperature of '600 °C is the upper limit for the n-type samples thermal stability. |
publishDate |
2002 |
dc.date.issued.fl_str_mv |
2002 |
dc.date.accessioned.fl_str_mv |
2016-05-17T02:07:27Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/141219 |
dc.identifier.issn.pt_BR.fl_str_mv |
0003-6951 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000313579 |
identifier_str_mv |
0003-6951 000313579 |
url |
http://hdl.handle.net/10183/141219 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Applied physics letters. Melville. Vol. 80, no. 2 (Jan. 2002), p. 264-266 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Institucional da UFRGS instname:Universidade Federal do Rio Grande do Sul (UFRGS) instacron:UFRGS |
instname_str |
Universidade Federal do Rio Grande do Sul (UFRGS) |
instacron_str |
UFRGS |
institution |
UFRGS |
reponame_str |
Repositório Institucional da UFRGS |
collection |
Repositório Institucional da UFRGS |
bitstream.url.fl_str_mv |
http://www.lume.ufrgs.br/bitstream/10183/141219/1/000313579.pdf http://www.lume.ufrgs.br/bitstream/10183/141219/2/000313579.pdf.txt http://www.lume.ufrgs.br/bitstream/10183/141219/3/000313579.pdf.jpg |
bitstream.checksum.fl_str_mv |
c195192544649712911d9c2bc1e5c2b2 707d66176611f18590f7bbe019947da5 eff10058001c3cfcd5afad20121258eb |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS) |
repository.mail.fl_str_mv |
|
_version_ |
1801224900143218688 |