Effects of carbon on dynamic annealing and on electrical activation of dopants in silicon substrate

• Autor(a) principal: Souza, Joel Pereira de
• Data de Publicação: 1994
• Outros Autores: Boudinov, Henri Ivanov, Fichtner, Paulo Fernando Papaleo
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/117946
• topic: Física da matéria condensada; Implantação de íons

The effect of C on the implantation damage accumulation in Si crystal and on the electrical T activation of dopants was investigated, using RBS-channeling technique, sheet resistivity and Hall measurements. The damage profiles in Si implanted with 12C+ or llBS at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate during 12c+im plantation than in the case of "B+, especially for doses > 2 x I0l5 ~rn-~I t. i s shown that the dynamic annealing is strongly reduced in regions doped with C. In addition, the influence of C on the electrical activation of the co-implanted dopant is discussed for the case of B and Bi. A model considering an interaction between C and Si self-interstitial (Sir) atoms during implantation and the subsequent thermal annealing is proposed to explain the enhanced implantation damage accumulation and the activation behavior of B in samples co-implanted with C