Electrical isolation of InGaP by proton and helium ion irradiation
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95822 |
Resumo: | Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C. |
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Danilov, IuriSouza, Joel Pereira deBoudinov, Henri IvanovBettini, JeffersonCarvalho, Mauro Monteiro Garcia de2014-05-31T02:06:43Z20020021-8979http://hdl.handle.net/10183/95822000334260Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C.application/pdfengJournal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265Densidade de portadoresCompostos de galioSemicondutores iii-vCompostos de indioEfeitos de feixe iônicoCamadas epitaxiais semicondutorasEstabilidade térmicaElectrical isolation of InGaP by proton and helium ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000334260.pdf000334260.pdfTexto completo (inglês)application/pdf220031http://www.lume.ufrgs.br/bitstream/10183/95822/1/000334260.pdf49a22bb2f34430a1fbe072412f6e4c86MD51TEXT000334260.pdf.txt000334260.pdf.txtExtracted Texttext/plain21904http://www.lume.ufrgs.br/bitstream/10183/95822/2/000334260.pdf.txt4cf55f80051ce8a405ee1845ee7be798MD52THUMBNAIL000334260.pdf.jpg000334260.pdf.jpgGenerated Thumbnailimage/jpeg1555http://www.lume.ufrgs.br/bitstream/10183/95822/3/000334260.pdf.jpg8585eac78e3ab748fdc9fc0b88690464MD5310183/958222018-10-15 08:19:33.117oai:www.lume.ufrgs.br:10183/95822Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:19:33Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical isolation of InGaP by proton and helium ion irradiation |
title |
Electrical isolation of InGaP by proton and helium ion irradiation |
spellingShingle |
Electrical isolation of InGaP by proton and helium ion irradiation Danilov, Iuri Densidade de portadores Compostos de galio Semicondutores iii-v Compostos de indio Efeitos de feixe iônico Camadas epitaxiais semicondutoras Estabilidade térmica |
title_short |
Electrical isolation of InGaP by proton and helium ion irradiation |
title_full |
Electrical isolation of InGaP by proton and helium ion irradiation |
title_fullStr |
Electrical isolation of InGaP by proton and helium ion irradiation |
title_full_unstemmed |
Electrical isolation of InGaP by proton and helium ion irradiation |
title_sort |
Electrical isolation of InGaP by proton and helium ion irradiation |
author |
Danilov, Iuri |
author_facet |
Danilov, Iuri Souza, Joel Pereira de Boudinov, Henri Ivanov Bettini, Jefferson Carvalho, Mauro Monteiro Garcia de |
author_role |
author |
author2 |
Souza, Joel Pereira de Boudinov, Henri Ivanov Bettini, Jefferson Carvalho, Mauro Monteiro Garcia de |
author2_role |
author author author author |
dc.contributor.author.fl_str_mv |
Danilov, Iuri Souza, Joel Pereira de Boudinov, Henri Ivanov Bettini, Jefferson Carvalho, Mauro Monteiro Garcia de |
dc.subject.por.fl_str_mv |
Densidade de portadores Compostos de galio Semicondutores iii-v Compostos de indio Efeitos de feixe iônico Camadas epitaxiais semicondutoras Estabilidade térmica |
topic |
Densidade de portadores Compostos de galio Semicondutores iii-v Compostos de indio Efeitos de feixe iônico Camadas epitaxiais semicondutoras Estabilidade térmica |
description |
Formation of electrical isolation in n- and p-type In0.49Ga0.51P epitaxial layers grown on semi-insulating GaAs substrates was investigated using proton or helium ion irradiation. Sheet resistance increases with the irradiation dose, reaching a saturation level of ≈109 Ω/. The results show that the threshold dose necessary for complete isolation linearly depends on the original carrier concentration either in p- or n-type doped InGaP layers. Thermal stability of the isolation during postirradiation annealing was found to increase with accumulation of the ion dose. The maximum temperature at which the isolation persists is ~=500°C. |
publishDate |
2002 |
dc.date.issued.fl_str_mv |
2002 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:43Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10183/95822 |
dc.identifier.issn.pt_BR.fl_str_mv |
0021-8979 |
dc.identifier.nrb.pt_BR.fl_str_mv |
000334260 |
identifier_str_mv |
0021-8979 000334260 |
url |
http://hdl.handle.net/10183/95822 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
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