Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/TED.2016.2598288 http://hdl.handle.net/11449/159109 |
Resumo: | An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation. |
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Repositório Institucional da UNESP |
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Low-Frequency Noise Assessment of Different Ge pFinFET STI ProcessesGe pFinFETlow-frequency noise (LFN)shallow trench isolation (STI) firstSTI lastAn experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)FWOLogic IIAP ProgramUniv Sao Paulo, BR-05508010 Sao Paulo, BrazilKatholieke Univ Leuven, B-3001 Leuven, BelgiumIMEC, B-3001 Leuven, BelgiumUniv Estadual Paulista, BR-13876750 Sao Joao Da Boa Vista, BrazilNatl Univ Singapore, Singapore 117575, SingaporeKatholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, BelgiumUniv Estadual Paulista, BR-13876750 Sao Joao Da Boa Vista, BrazilIeee-inst Electrical Electronics Engineers IncUniversidade de São Paulo (USP)Katholieke Univ LeuvenIMECUniversidade Estadual Paulista (Unesp)Natl Univ SingaporeOliveira, Alberto V. deSimoen, EddyMitard, JeromeAgopian, Paula G. D. [UNESP]Martino, Joao AntonioLanger, RobertWitters, LiesbethCollaert, NadineThean, Aaron Voon-YewClaeys, Cor2018-11-26T15:31:25Z2018-11-26T15:31:25Z2016-10-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article4031-4037application/pdfhttp://dx.doi.org/10.1109/TED.2016.2598288Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016.0018-9383http://hdl.handle.net/11449/15910910.1109/TED.2016.2598288WOS:000384575700032WOS000384575700032.pdf04969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengIeee Transactions On Electron Devices0,839info:eu-repo/semantics/openAccess2023-10-07T06:03:20Zoai:repositorio.unesp.br:11449/159109Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:12:58.443843Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
title |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
spellingShingle |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes Oliveira, Alberto V. de Ge pFinFET low-frequency noise (LFN) shallow trench isolation (STI) first STI last |
title_short |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
title_full |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
title_fullStr |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
title_full_unstemmed |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
title_sort |
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes |
author |
Oliveira, Alberto V. de |
author_facet |
Oliveira, Alberto V. de Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao Antonio Langer, Robert Witters, Liesbeth Collaert, Nadine Thean, Aaron Voon-Yew Claeys, Cor |
author_role |
author |
author2 |
Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao Antonio Langer, Robert Witters, Liesbeth Collaert, Nadine Thean, Aaron Voon-Yew Claeys, Cor |
author2_role |
author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Katholieke Univ Leuven IMEC Universidade Estadual Paulista (Unesp) Natl Univ Singapore |
dc.contributor.author.fl_str_mv |
Oliveira, Alberto V. de Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao Antonio Langer, Robert Witters, Liesbeth Collaert, Nadine Thean, Aaron Voon-Yew Claeys, Cor |
dc.subject.por.fl_str_mv |
Ge pFinFET low-frequency noise (LFN) shallow trench isolation (STI) first STI last |
topic |
Ge pFinFET low-frequency noise (LFN) shallow trench isolation (STI) first STI last |
description |
An experimental low-frequency noise (LFN) assessment of long channel Ge pFinFET devices fabricated in different shallow trench isolation (STI) processes is presented, taking into consideration devices with fin widths from 100 nm (planar-like) down to 20 nm. In addition, the correlation among LFN parameters, hole mobility and threshold voltage, is also evaluated. The carrier number fluctuation (Delta N) model is confirmed as dominant mechanism for all studied Ge pFinFETs and there is no correlation with the used STI process. From the LFN, it is evidenced that the Coulomb scattering mobility mechanism plays an important role for STI-first process, resulting in a mobility degradation. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-10-01 2018-11-26T15:31:25Z 2018-11-26T15:31:25Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/TED.2016.2598288 Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016. 0018-9383 http://hdl.handle.net/11449/159109 10.1109/TED.2016.2598288 WOS:000384575700032 WOS000384575700032.pdf 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1109/TED.2016.2598288 http://hdl.handle.net/11449/159109 |
identifier_str_mv |
Ieee Transactions On Electron Devices. Piscataway: Ieee-inst Electrical Electronics Engineers Inc, v. 63, n. 10, p. 4031-4037, 2016. 0018-9383 10.1109/TED.2016.2598288 WOS:000384575700032 WOS000384575700032.pdf 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Ieee Transactions On Electron Devices 0,839 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
4031-4037 application/pdf |
dc.publisher.none.fl_str_mv |
Ieee-inst Electrical Electronics Engineers Inc |
publisher.none.fl_str_mv |
Ieee-inst Electrical Electronics Engineers Inc |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128333075972096 |