GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes
Autor(a) principal: | |
---|---|
Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/LED.2016.2595398 http://hdl.handle.net/11449/168935 |
Resumo: | This letter characterizes the generation-recombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first strained devices; STI last for relaxed and strained ones. It is shown that many Lorentzians exhibit a VGS-independent and thermally activated characteristic frequency. This points out that the responsible defects are located inside the fin and they are found for all studied process conditions. One type of defect with a time constant value of 10 ms at room temperature is process-independent. Regarding the defects, their activation energies and hole capture cross sections have been extracted for fin widths varying from planar-like devices to narrow ones. It is shown that the STI last strained and relaxed devices yield a surface trap density three orders of magnitude above the typical value obtained for a blanket wafer. |
id |
UNSP_e09272affd1de0ecba41b4470ca42878 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/168935 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last ProcessesGe pFinFETGR-noise characterizationSTI firstSTI lastThis letter characterizes the generation-recombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first strained devices; STI last for relaxed and strained ones. It is shown that many Lorentzians exhibit a VGS-independent and thermally activated characteristic frequency. This points out that the responsible defects are located inside the fin and they are found for all studied process conditions. One type of defect with a time constant value of 10 ms at room temperature is process-independent. Regarding the defects, their activation energies and hole capture cross sections have been extracted for fin widths varying from planar-like devices to narrow ones. It is shown that the STI last strained and relaxed devices yield a surface trap density three orders of magnitude above the typical value obtained for a blanket wafer.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)University of Sao PauloKatholieke Universiteit LeuvenImecUNESPDepartment of Electrical Engineering Katholieke Universiteit LeuvenUNESPCAPES: BEX 10537/14-7Universidade de São Paulo (USP)Katholieke Universiteit LeuvenImecUniversidade Estadual Paulista (Unesp)Oliveira, Alberto V.Simoen, EddyMitard, JeromeAgopian, Paula G. D. [UNESP]Martino, Joao A.Langer, RobertWitters, Liesbeth J.Collaert, NadineThean, AaronClaeys, Cor2018-12-11T16:43:41Z2018-12-11T16:43:41Z2016-09-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1092-1095application/pdfhttp://dx.doi.org/10.1109/LED.2016.2595398IEEE Electron Device Letters, v. 37, n. 9, p. 1092-1095, 2016.0741-3106http://hdl.handle.net/11449/16893510.1109/LED.2016.25953982-s2.0-849848382082-s2.0-84984838208.pdf04969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengIEEE Electron Device Letters1,361info:eu-repo/semantics/openAccess2023-11-22T06:12:06Zoai:repositorio.unesp.br:11449/168935Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:23:46.485177Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
title |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
spellingShingle |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes Oliveira, Alberto V. Ge pFinFET GR-noise characterization STI first STI last |
title_short |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
title_full |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
title_fullStr |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
title_full_unstemmed |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
title_sort |
GR-Noise Characterization of Ge pFinFETs with STI First and STI Last Processes |
author |
Oliveira, Alberto V. |
author_facet |
Oliveira, Alberto V. Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao A. Langer, Robert Witters, Liesbeth J. Collaert, Nadine Thean, Aaron Claeys, Cor |
author_role |
author |
author2 |
Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao A. Langer, Robert Witters, Liesbeth J. Collaert, Nadine Thean, Aaron Claeys, Cor |
author2_role |
author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Katholieke Universiteit Leuven Imec Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Oliveira, Alberto V. Simoen, Eddy Mitard, Jerome Agopian, Paula G. D. [UNESP] Martino, Joao A. Langer, Robert Witters, Liesbeth J. Collaert, Nadine Thean, Aaron Claeys, Cor |
dc.subject.por.fl_str_mv |
Ge pFinFET GR-noise characterization STI first STI last |
topic |
Ge pFinFET GR-noise characterization STI first STI last |
description |
This letter characterizes the generation-recombination noise of Ge pFinFETs, for three different integration schemes: shallow trench isolation (STI) first strained devices; STI last for relaxed and strained ones. It is shown that many Lorentzians exhibit a VGS-independent and thermally activated characteristic frequency. This points out that the responsible defects are located inside the fin and they are found for all studied process conditions. One type of defect with a time constant value of 10 ms at room temperature is process-independent. Regarding the defects, their activation energies and hole capture cross sections have been extracted for fin widths varying from planar-like devices to narrow ones. It is shown that the STI last strained and relaxed devices yield a surface trap density three orders of magnitude above the typical value obtained for a blanket wafer. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-09-01 2018-12-11T16:43:41Z 2018-12-11T16:43:41Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/LED.2016.2595398 IEEE Electron Device Letters, v. 37, n. 9, p. 1092-1095, 2016. 0741-3106 http://hdl.handle.net/11449/168935 10.1109/LED.2016.2595398 2-s2.0-84984838208 2-s2.0-84984838208.pdf 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1109/LED.2016.2595398 http://hdl.handle.net/11449/168935 |
identifier_str_mv |
IEEE Electron Device Letters, v. 37, n. 9, p. 1092-1095, 2016. 0741-3106 10.1109/LED.2016.2595398 2-s2.0-84984838208 2-s2.0-84984838208.pdf 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
IEEE Electron Device Letters 1,361 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1092-1095 application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128927166627840 |