Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/159328 |
Resumo: | This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount (In0.7Ga0.3As compared to In0.53Ga0.47As) the band to band tunneling (BTBT) is improved due to bandgap narrowing. A higher Zn diffusion temperature gives rise to a higher source doping, resulting in a smaller tunneling length, which also increases BTBT. In both devices the intrinsic voltage gain is improved. One interesting characteristic of these devices is that they present good analog performance at low voltages (V-GS=V-DS=0.6V), which is promising for low power/low voltage analog applications. High-temperature operation increases in all cases more the output conductance than the transconductance, resulting in a lower intrinsic voltage gain. |
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Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETsIII-V materialsAnalogTFETTemperature effectsThis work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount (In0.7Ga0.3As compared to In0.53Ga0.47As) the band to band tunneling (BTBT) is improved due to bandgap narrowing. A higher Zn diffusion temperature gives rise to a higher source doping, resulting in a smaller tunneling length, which also increases BTBT. In both devices the intrinsic voltage gain is improved. One interesting characteristic of these devices is that they present good analog performance at low voltages (V-GS=V-DS=0.6V), which is promising for low power/low voltage analog applications. High-temperature operation increases in all cases more the output conductance than the transconductance, resulting in a lower intrinsic voltage gain.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)imec's Logic Device Program and its Core PartnersImec, Leuven, BelgiumUniv Sao Paulo, LSI PSI USP, Sao Paulo, BrazilUniv Estadual Paulista, UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, BrazilKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUniv Estadual Paulista, UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, BrazilIeeeImecUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Katholieke Univ LeuvenBordallo, C.Martino, J.Agopian, P. [UNESP]Alian, A.Mols, Y.Rooyackers, R.Vandooren, A.Verhulst, A.Simoen, E.Claeys, C.Collaert, N.Thean, A.IEEE2018-11-26T15:38:00Z2018-11-26T15:38:00Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject32016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016.http://hdl.handle.net/11449/159328WOS:000392693000023Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)info:eu-repo/semantics/openAccess2021-10-23T21:47:05Zoai:repositorio.unesp.br:11449/159328Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:14:15.739687Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
title |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
spellingShingle |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs Bordallo, C. III-V materials Analog TFET Temperature effects |
title_short |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
title_full |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
title_fullStr |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
title_full_unstemmed |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
title_sort |
Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs |
author |
Bordallo, C. |
author_facet |
Bordallo, C. Martino, J. Agopian, P. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. Simoen, E. Claeys, C. Collaert, N. Thean, A. IEEE |
author_role |
author |
author2 |
Martino, J. Agopian, P. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. Simoen, E. Claeys, C. Collaert, N. Thean, A. IEEE |
author2_role |
author author author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Imec Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) Katholieke Univ Leuven |
dc.contributor.author.fl_str_mv |
Bordallo, C. Martino, J. Agopian, P. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. Simoen, E. Claeys, C. Collaert, N. Thean, A. IEEE |
dc.subject.por.fl_str_mv |
III-V materials Analog TFET Temperature effects |
topic |
III-V materials Analog TFET Temperature effects |
description |
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount (In0.7Ga0.3As compared to In0.53Ga0.47As) the band to band tunneling (BTBT) is improved due to bandgap narrowing. A higher Zn diffusion temperature gives rise to a higher source doping, resulting in a smaller tunneling length, which also increases BTBT. In both devices the intrinsic voltage gain is improved. One interesting characteristic of these devices is that they present good analog performance at low voltages (V-GS=V-DS=0.6V), which is promising for low power/low voltage analog applications. High-temperature operation increases in all cases more the output conductance than the transconductance, resulting in a lower intrinsic voltage gain. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-01-01 2018-11-26T15:38:00Z 2018-11-26T15:38:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016. http://hdl.handle.net/11449/159328 WOS:000392693000023 |
identifier_str_mv |
2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2016. WOS:000392693000023 |
url |
http://hdl.handle.net/11449/159328 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2016 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
3 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129039386279936 |