Application of UTBBBE SOI tunnel-FET as a dual-technology transistor
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/SBMicro.2019.8919316 http://hdl.handle.net/11449/198329 |
Resumo: | In this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept. |
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Repositório Institucional da UNESP |
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Application of UTBBBE SOI tunnel-FET as a dual-technology transistordual technology transistorMOSFETReconfigurable transistorSilicon-On-Insulator (SOI)Tunnel-FETIn this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept.University of Sao Paulo LSI/PSI/USPUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Carlos Mori, A. B.Paula Agopian, G. D. [UNESP]Martino, Joao A.2020-12-12T01:09:52Z2020-12-12T01:09:52Z2019-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2019.8919316SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.http://hdl.handle.net/11449/19832910.1109/SBMicro.2019.89193162-s2.0-85077182307Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devicesinfo:eu-repo/semantics/openAccess2021-10-23T09:55:37Zoai:repositorio.unesp.br:11449/198329Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:50:51.361508Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
title |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
spellingShingle |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor Carlos Mori, A. B. dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
title_short |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
title_full |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
title_fullStr |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
title_full_unstemmed |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
title_sort |
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor |
author |
Carlos Mori, A. B. |
author_facet |
Carlos Mori, A. B. Paula Agopian, G. D. [UNESP] Martino, Joao A. |
author_role |
author |
author2 |
Paula Agopian, G. D. [UNESP] Martino, Joao A. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Carlos Mori, A. B. Paula Agopian, G. D. [UNESP] Martino, Joao A. |
dc.subject.por.fl_str_mv |
dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
topic |
dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
description |
In this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias condition. The principle is based on the carrier type generated by the back gate electric field. For negative back gate and drain biases applied in the device studied in this work, it works like a pTFET, while for positive ones it operates as an nMOS. TCAD device simulation was used for the proof of concept. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-08-01 2020-12-12T01:09:52Z 2020-12-12T01:09:52Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/SBMicro.2019.8919316 SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices. http://hdl.handle.net/11449/198329 10.1109/SBMicro.2019.8919316 2-s2.0-85077182307 |
url |
http://dx.doi.org/10.1109/SBMicro.2019.8919316 http://hdl.handle.net/11449/198329 |
identifier_str_mv |
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices. 10.1109/SBMicro.2019.8919316 2-s2.0-85077182307 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128708984176640 |