Low temperature effect on strained and relaxed Ge pFinFETs STI last processes

Detalhes bibliográficos
Autor(a) principal: Oliveira, A. V.
Data de Publicação: 2016
Outros Autores: Simoen, E., Agopian, P. G.D. [UNESP], Martino, J. A., Mitard, J., Witters, L., Langer, R., Collaert, N., Thean, A., Claeys, C.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1149/07504.0213ecst
http://hdl.handle.net/11449/169048
Resumo: Ge pFinFETs, fabricated either with an STI last process on a Geon-Si virtual substrates or a SiGe strain-relaxed buffer, have been systematically evaluated at temperatures from 200 K down to 77 K. In the first cases, the Ge channel is relaxed, while in the second case, compressively strained fins have been obtained. Cryogenic testing shows to be an important tool for evaluating the static device performance parameters and it helps to resolve the impact of strain on the drain current. Apart from that, the off-state leakage in the subthreshold region can be evaluated as a function of temperature, showing that besides thermal Shockley-Read-Hall generation, other field-assisted mechanisms play a role.
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spelling Low temperature effect on strained and relaxed Ge pFinFETs STI last processesGe pFinFETs, fabricated either with an STI last process on a Geon-Si virtual substrates or a SiGe strain-relaxed buffer, have been systematically evaluated at temperatures from 200 K down to 77 K. In the first cases, the Ge channel is relaxed, while in the second case, compressively strained fins have been obtained. Cryogenic testing shows to be an important tool for evaluating the static device performance parameters and it helps to resolve the impact of strain on the drain current. Apart from that, the off-state leakage in the subthreshold region can be evaluated as a function of temperature, showing that besides thermal Shockley-Read-Hall generation, other field-assisted mechanisms play a role.LSI/PSI/USP University of Sao PauloImecUNESP Univ. Estadual PaulistaElectrical and Comp. Eng. Dept. National University of SingaporeE.E. Dept. KU LeuvenUNESP Univ. Estadual PaulistaUniversidade de São Paulo (USP)ImecUniversidade Estadual Paulista (Unesp)National University of SingaporeKU LeuvenOliveira, A. V.Simoen, E.Agopian, P. G.D. [UNESP]Martino, J. A.Mitard, J.Witters, L.Langer, R.Collaert, N.Thean, A.Claeys, C.2018-12-11T16:44:08Z2018-12-11T16:44:08Z2016-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject213-218application/pdfhttp://dx.doi.org/10.1149/07504.0213ecstECS Transactions, v. 75, n. 4, p. 213-218, 2016.1938-67371938-5862http://hdl.handle.net/11449/16904810.1149/07504.0213ecst2-s2.0-849917161382-s2.0-84991716138.pdf04969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Transactions0,2250,225info:eu-repo/semantics/openAccess2023-12-17T06:22:38Zoai:repositorio.unesp.br:11449/169048Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T20:35:44.622293Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
title Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
spellingShingle Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
Oliveira, A. V.
title_short Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
title_full Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
title_fullStr Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
title_full_unstemmed Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
title_sort Low temperature effect on strained and relaxed Ge pFinFETs STI last processes
author Oliveira, A. V.
author_facet Oliveira, A. V.
Simoen, E.
Agopian, P. G.D. [UNESP]
Martino, J. A.
Mitard, J.
Witters, L.
Langer, R.
Collaert, N.
Thean, A.
Claeys, C.
author_role author
author2 Simoen, E.
Agopian, P. G.D. [UNESP]
Martino, J. A.
Mitard, J.
Witters, L.
Langer, R.
Collaert, N.
Thean, A.
Claeys, C.
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Imec
Universidade Estadual Paulista (Unesp)
National University of Singapore
KU Leuven
dc.contributor.author.fl_str_mv Oliveira, A. V.
Simoen, E.
Agopian, P. G.D. [UNESP]
Martino, J. A.
Mitard, J.
Witters, L.
Langer, R.
Collaert, N.
Thean, A.
Claeys, C.
description Ge pFinFETs, fabricated either with an STI last process on a Geon-Si virtual substrates or a SiGe strain-relaxed buffer, have been systematically evaluated at temperatures from 200 K down to 77 K. In the first cases, the Ge channel is relaxed, while in the second case, compressively strained fins have been obtained. Cryogenic testing shows to be an important tool for evaluating the static device performance parameters and it helps to resolve the impact of strain on the drain current. Apart from that, the off-state leakage in the subthreshold region can be evaluated as a function of temperature, showing that besides thermal Shockley-Read-Hall generation, other field-assisted mechanisms play a role.
publishDate 2016
dc.date.none.fl_str_mv 2016-01-01
2018-12-11T16:44:08Z
2018-12-11T16:44:08Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1149/07504.0213ecst
ECS Transactions, v. 75, n. 4, p. 213-218, 2016.
1938-6737
1938-5862
http://hdl.handle.net/11449/169048
10.1149/07504.0213ecst
2-s2.0-84991716138
2-s2.0-84991716138.pdf
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1149/07504.0213ecst
http://hdl.handle.net/11449/169048
identifier_str_mv ECS Transactions, v. 75, n. 4, p. 213-218, 2016.
1938-6737
1938-5862
10.1149/07504.0213ecst
2-s2.0-84991716138
2-s2.0-84991716138.pdf
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv ECS Transactions
0,225
0,225
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 213-218
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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