Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
Autor(a) principal: | |
---|---|
Data de Publicação: | 2014 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1557/opl.2014.701 http://hdl.handle.net/11449/220415 |
Resumo: | Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O<inf>2</inf> plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O<inf>2</inf> plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film. |
id |
UNSP_eaaef4882d7d765167ebc82bcc19b9e6 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/220415 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profilingDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O<inf>2</inf> plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O<inf>2</inf> plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)NanO LaB, Departamento de Física, Universidade Federal de São CarlosFaculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita FilhoLaboratório Associado de Sensores e Materiais, LAS, INPEInstitute Federal de Educação, Ciência e Tecnologia de São PauloFaculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita FilhoCNPq: 2010/302640-0Universidade Federal de São Carlos (UFSCar)Universidade Estadual Paulista (UNESP)Laboratório Associado de Sensores e Materiais, LAS, INPEInstitute Federal de Educação, Ciência e Tecnologia de São PauloAraujo, Luana S.Berengue, Olivia [UNESP]Baldan, MaurícioFerreira, NeideneiMoro, JoãoChiquito, Adenilson2022-04-28T19:01:26Z2022-04-28T19:01:26Z2014-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject1-6http://dx.doi.org/10.1557/opl.2014.701Materials Research Society Symposium Proceedings, v. 1634, n. January, p. 1-6, 2014.0272-9172http://hdl.handle.net/11449/22041510.1557/opl.2014.7012-s2.0-84938360068Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Research Society Symposium Proceedingsinfo:eu-repo/semantics/openAccess2022-04-28T19:01:26Zoai:repositorio.unesp.br:11449/220415Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:07:21.612985Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
spellingShingle |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling Araujo, Luana S. |
title_short |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_full |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_fullStr |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_full_unstemmed |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_sort |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
author |
Araujo, Luana S. |
author_facet |
Araujo, Luana S. Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, João Chiquito, Adenilson |
author_role |
author |
author2 |
Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, João Chiquito, Adenilson |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal de São Carlos (UFSCar) Universidade Estadual Paulista (UNESP) Laboratório Associado de Sensores e Materiais, LAS, INPE Institute Federal de Educação, Ciência e Tecnologia de São Paulo |
dc.contributor.author.fl_str_mv |
Araujo, Luana S. Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, João Chiquito, Adenilson |
description |
Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O<inf>2</inf> plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O<inf>2</inf> plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-01-01 2022-04-28T19:01:26Z 2022-04-28T19:01:26Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1557/opl.2014.701 Materials Research Society Symposium Proceedings, v. 1634, n. January, p. 1-6, 2014. 0272-9172 http://hdl.handle.net/11449/220415 10.1557/opl.2014.701 2-s2.0-84938360068 |
url |
http://dx.doi.org/10.1557/opl.2014.701 http://hdl.handle.net/11449/220415 |
identifier_str_mv |
Materials Research Society Symposium Proceedings, v. 1634, n. January, p. 1-6, 2014. 0272-9172 10.1557/opl.2014.701 2-s2.0-84938360068 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Research Society Symposium Proceedings |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
1-6 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128318309924864 |