Study of the utbbbe soi tunnel-fet working as a dual-technology transistor
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.29292/jics.v16i2.208 http://hdl.handle.net/11449/222332 |
Resumo: | — In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS when a positive back bias is applied. The working principle is based on the generation of a channel of either holes or electrons by the back gate electric field, which can then be depleted through the front gate bias. TCAD device simulation was used for the proof of concept. |
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Repositório Institucional da UNESP |
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Study of the utbbbe soi tunnel-fet working as a dual-technology transistorDual technology transistorMOSFETReconfigurable transistorSilicon-On-Insulator (SOI)Tunnel-FET— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS when a positive back bias is applied. The working principle is based on the generation of a channel of either holes or electrons by the back gate electric field, which can then be depleted through the front gate bias. TCAD device simulation was used for the proof of concept.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)LSI/PSI/USP University of Sao PauloUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityCAPES: 2017/26489-7CNPq: 2017/26489-7FAPESP: 2017/26489-7Universidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Mori, Carlos A. B.Agopian, Paula G. D. [UNESP]Martino, João A.2022-04-28T19:44:05Z2022-04-28T19:44:05Z2021-08-23info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.29292/jics.v16i2.208Journal of Integrated Circuits and Systems, v. 16, n. 2, 2021.1872-02341807-1953http://hdl.handle.net/11449/22233210.29292/jics.v16i2.2082-s2.0-85114042759Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Integrated Circuits and Systemsinfo:eu-repo/semantics/openAccess2022-04-28T19:44:05Zoai:repositorio.unesp.br:11449/222332Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:42:04.953169Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
title |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
spellingShingle |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor Mori, Carlos A. B. Dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
title_short |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
title_full |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
title_fullStr |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
title_full_unstemmed |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
title_sort |
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor |
author |
Mori, Carlos A. B. |
author_facet |
Mori, Carlos A. B. Agopian, Paula G. D. [UNESP] Martino, João A. |
author_role |
author |
author2 |
Agopian, Paula G. D. [UNESP] Martino, João A. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Mori, Carlos A. B. Agopian, Paula G. D. [UNESP] Martino, João A. |
dc.subject.por.fl_str_mv |
Dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
topic |
Dual technology transistor MOSFET Reconfigurable transistor Silicon-On-Insulator (SOI) Tunnel-FET |
description |
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS when a positive back bias is applied. The working principle is based on the generation of a channel of either holes or electrons by the back gate electric field, which can then be depleted through the front gate bias. TCAD device simulation was used for the proof of concept. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-08-23 2022-04-28T19:44:05Z 2022-04-28T19:44:05Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.29292/jics.v16i2.208 Journal of Integrated Circuits and Systems, v. 16, n. 2, 2021. 1872-0234 1807-1953 http://hdl.handle.net/11449/222332 10.29292/jics.v16i2.208 2-s2.0-85114042759 |
url |
http://dx.doi.org/10.29292/jics.v16i2.208 http://hdl.handle.net/11449/222332 |
identifier_str_mv |
Journal of Integrated Circuits and Systems, v. 16, n. 2, 2021. 1872-0234 1807-1953 10.29292/jics.v16i2.208 2-s2.0-85114042759 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Journal of Integrated Circuits and Systems |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129107740852224 |