Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/1361-6641/ab118f http://hdl.handle.net/11449/187835 |
Resumo: | This paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. This work is based on electrical measurements and TCAD simulations. Devices with different dimensions were exposed up to 10 Mrad(Si) dose of proton radiation. For transistors with narrow fin width, the radiation influence is negligible in both devices types. For WFIN = 250 nm and a proton radiation dose up to 10 Mrad(Si), on the other hand, a severe influence is observed in nFinFETs and pFinFETs present on the same die as the p-type TFETs. In the TFETs, no marked influence is observed. Only for a TFET of WFIN = 500 nm and 10 Mrad(Si) one can observe some radiation influence. The main degradation is caused by the buried oxide positive fixed charges and the interface traps which was also confirmed by TCAD simulations. The tunneling current of Tunnel-FETs presents a much better radiation hardness compared to the drift-diffusion current of SOI FinFETs. |
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Repositório Institucional da UNESP |
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Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of viewFinFETsproton radiationTFETsThis paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. This work is based on electrical measurements and TCAD simulations. Devices with different dimensions were exposed up to 10 Mrad(Si) dose of proton radiation. For transistors with narrow fin width, the radiation influence is negligible in both devices types. For WFIN = 250 nm and a proton radiation dose up to 10 Mrad(Si), on the other hand, a severe influence is observed in nFinFETs and pFinFETs present on the same die as the p-type TFETs. In the TFETs, no marked influence is observed. Only for a TFET of WFIN = 500 nm and 10 Mrad(Si) one can observe some radiation influence. The main degradation is caused by the buried oxide positive fixed charges and the interface traps which was also confirmed by TCAD simulations. The tunneling current of Tunnel-FETs presents a much better radiation hardness compared to the drift-diffusion current of SOI FinFETs.Sao Paulo State University (UNESP) Campus Sao Joao da Boa VistaLSI/PSI/USP University of Sao PauloClaRooImecE.E. Dept KU LeuvenSao Paulo State University (UNESP) Campus Sao Joao da Boa VistaUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)ClaRooImecKU LeuvenAgopian, P. G.D. [UNESP]Torres, H. L.F.Martino, J. A.Rooyackers, R.Simoen, E.Claeys, C.Collaert, N.2019-10-06T15:48:43Z2019-10-06T15:48:43Z2019-05-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1088/1361-6641/ab118fSemiconductor Science and Technology, v. 34, n. 6, 2019.1361-66410268-1242http://hdl.handle.net/11449/18783510.1088/1361-6641/ab118f2-s2.0-8506847701304969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSemiconductor Science and Technologyinfo:eu-repo/semantics/openAccess2021-10-23T20:19:29Zoai:repositorio.unesp.br:11449/187835Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T20:19:29Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
title |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
spellingShingle |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view Agopian, P. G.D. [UNESP] FinFETs proton radiation TFETs |
title_short |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
title_full |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
title_fullStr |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
title_full_unstemmed |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
title_sort |
Comparison between proton irradiated triple gate SOI TFETS and finfets from a TID point of view |
author |
Agopian, P. G.D. [UNESP] |
author_facet |
Agopian, P. G.D. [UNESP] Torres, H. L.F. Martino, J. A. Rooyackers, R. Simoen, E. Claeys, C. Collaert, N. |
author_role |
author |
author2 |
Torres, H. L.F. Martino, J. A. Rooyackers, R. Simoen, E. Claeys, C. Collaert, N. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) ClaRoo Imec KU Leuven |
dc.contributor.author.fl_str_mv |
Agopian, P. G.D. [UNESP] Torres, H. L.F. Martino, J. A. Rooyackers, R. Simoen, E. Claeys, C. Collaert, N. |
dc.subject.por.fl_str_mv |
FinFETs proton radiation TFETs |
topic |
FinFETs proton radiation TFETs |
description |
This paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the same structure on the same wafer. This work is based on electrical measurements and TCAD simulations. Devices with different dimensions were exposed up to 10 Mrad(Si) dose of proton radiation. For transistors with narrow fin width, the radiation influence is negligible in both devices types. For WFIN = 250 nm and a proton radiation dose up to 10 Mrad(Si), on the other hand, a severe influence is observed in nFinFETs and pFinFETs present on the same die as the p-type TFETs. In the TFETs, no marked influence is observed. Only for a TFET of WFIN = 500 nm and 10 Mrad(Si) one can observe some radiation influence. The main degradation is caused by the buried oxide positive fixed charges and the interface traps which was also confirmed by TCAD simulations. The tunneling current of Tunnel-FETs presents a much better radiation hardness compared to the drift-diffusion current of SOI FinFETs. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-10-06T15:48:43Z 2019-10-06T15:48:43Z 2019-05-01 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/1361-6641/ab118f Semiconductor Science and Technology, v. 34, n. 6, 2019. 1361-6641 0268-1242 http://hdl.handle.net/11449/187835 10.1088/1361-6641/ab118f 2-s2.0-85068477013 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1088/1361-6641/ab118f http://hdl.handle.net/11449/187835 |
identifier_str_mv |
Semiconductor Science and Technology, v. 34, n. 6, 2019. 1361-6641 0268-1242 10.1088/1361-6641/ab118f 2-s2.0-85068477013 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Semiconductor Science and Technology |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1803649921980563456 |