Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes
Autor(a) principal: | |
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Data de Publicação: | 2016 |
Outros Autores: | , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1088/0268-1242/31/11/114002 http://hdl.handle.net/11449/169081 |
Resumo: | The effective hole mobility of long strained Ge pFinFETs, fabricated with shallow trench isolation (STI) first and last approaches, is systematically evaluated from room temperature down to 77 K, from planar-like (100 nm) to narrow (20 nm) devices. The goal is to identify the dominant scattering mechanism. Here, the split capacitance-voltage (CV) technique has been applied, based on combined current-voltage (I-V) and CV measurements. It is shown that even at 77 K, the phonon scattering mechanism dominates the STI last process, while the Coulomb scattering strongly affects the STI first approach. On the other hand, the latter shows slightly higher hole mobility compared to the STI last counterpart. |
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Repositório Institucional da UNESP |
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Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processesGe pFinFETslow temperature operationsplit CV mobilitySTI first processSTI last processThe effective hole mobility of long strained Ge pFinFETs, fabricated with shallow trench isolation (STI) first and last approaches, is systematically evaluated from room temperature down to 77 K, from planar-like (100 nm) to narrow (20 nm) devices. The goal is to identify the dominant scattering mechanism. Here, the split capacitance-voltage (CV) technique has been applied, based on combined current-voltage (I-V) and CV measurements. It is shown that even at 77 K, the phonon scattering mechanism dominates the STI last process, while the Coulomb scattering strongly affects the STI first approach. On the other hand, the latter shows slightly higher hole mobility compared to the STI last counterpart.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fonds Wetenschappelijk OnderzoekLSI/PSI/USP University of Sao PauloImecDepartment of Solid State Sciences Ghent UniversityUNESP Universidade Estadual PaulistaEE Department KU LeuvenUNESP Universidade Estadual PaulistaUniversidade de São Paulo (USP)ImecGhent UniversityUniversidade Estadual Paulista (Unesp)KU LeuvenOliveira, A. V.Simoen, E.Agopian, P. G.D. [UNESP]Martino, J. A.Mitard, J.Witters, L.Langer, R.Collaert, N.Thean, A.Claeys, C.2018-12-11T16:44:23Z2018-12-11T16:44:23Z2016-10-13info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1088/0268-1242/31/11/114002Semiconductor Science and Technology, v. 31, n. 11, 2016.1361-66410268-1242http://hdl.handle.net/11449/16908110.1088/0268-1242/31/11/1140022-s2.0-849939958152-s2.0-84993995815.pdf04969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSemiconductor Science and Technology0,7570,757info:eu-repo/semantics/openAccess2023-12-21T06:26:33Zoai:repositorio.unesp.br:11449/169081Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T20:57:26.969567Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
title |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
spellingShingle |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes Oliveira, A. V. Ge pFinFETs low temperature operation split CV mobility STI first process STI last process |
title_short |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
title_full |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
title_fullStr |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
title_full_unstemmed |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
title_sort |
Split CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last processes |
author |
Oliveira, A. V. |
author_facet |
Oliveira, A. V. Simoen, E. Agopian, P. G.D. [UNESP] Martino, J. A. Mitard, J. Witters, L. Langer, R. Collaert, N. Thean, A. Claeys, C. |
author_role |
author |
author2 |
Simoen, E. Agopian, P. G.D. [UNESP] Martino, J. A. Mitard, J. Witters, L. Langer, R. Collaert, N. Thean, A. Claeys, C. |
author2_role |
author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Imec Ghent University Universidade Estadual Paulista (Unesp) KU Leuven |
dc.contributor.author.fl_str_mv |
Oliveira, A. V. Simoen, E. Agopian, P. G.D. [UNESP] Martino, J. A. Mitard, J. Witters, L. Langer, R. Collaert, N. Thean, A. Claeys, C. |
dc.subject.por.fl_str_mv |
Ge pFinFETs low temperature operation split CV mobility STI first process STI last process |
topic |
Ge pFinFETs low temperature operation split CV mobility STI first process STI last process |
description |
The effective hole mobility of long strained Ge pFinFETs, fabricated with shallow trench isolation (STI) first and last approaches, is systematically evaluated from room temperature down to 77 K, from planar-like (100 nm) to narrow (20 nm) devices. The goal is to identify the dominant scattering mechanism. Here, the split capacitance-voltage (CV) technique has been applied, based on combined current-voltage (I-V) and CV measurements. It is shown that even at 77 K, the phonon scattering mechanism dominates the STI last process, while the Coulomb scattering strongly affects the STI first approach. On the other hand, the latter shows slightly higher hole mobility compared to the STI last counterpart. |
publishDate |
2016 |
dc.date.none.fl_str_mv |
2016-10-13 2018-12-11T16:44:23Z 2018-12-11T16:44:23Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1088/0268-1242/31/11/114002 Semiconductor Science and Technology, v. 31, n. 11, 2016. 1361-6641 0268-1242 http://hdl.handle.net/11449/169081 10.1088/0268-1242/31/11/114002 2-s2.0-84993995815 2-s2.0-84993995815.pdf 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1088/0268-1242/31/11/114002 http://hdl.handle.net/11449/169081 |
identifier_str_mv |
Semiconductor Science and Technology, v. 31, n. 11, 2016. 1361-6641 0268-1242 10.1088/0268-1242/31/11/114002 2-s2.0-84993995815 2-s2.0-84993995815.pdf 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Semiconductor Science and Technology 0,757 0,757 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
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1808129267912933376 |